公开(公告)号：US20170186602A1

公开(公告)日：2017-06-29

申请号：US15285570

申请日：2016-10-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Yun YANG ,  Seung Hyun LEE ,  Kyoung Sil PARK ,  Yool KANG ,  Yi Seul KIM ,  Yun Seok CHOI

IPC: H01L21/027 ,  H01L21/308 ,  H01L21/02

CPC classification number: H01L21/0271 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02359 ,  H01L21/3081 ,  H01L51/0048

Abstract: A manufacturing method of a semiconductor device includes forming a hard mask layer on a semiconductor substrate using a hard mask composition. Hard mask patterns are formed by patterning the hard mask layer. Semiconductor patterns are formed by etching the semiconductor substrate using the hard mask patterns. The hard mask composition includes a plurality of first carbon nanotubes (CNTs) having a first length, a plurality of second CNTs having a second length, which is at least 3 times the first length, and a dispersing agent in which the first CNTs and the second CNTs are dispersed. The total mass of the first CNTs is 1 to 2.5 times the total mass of the second CNTs.