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    CALCULATION DEVICE AND CALCULATION METHOD
    3.
    发明公开
    CALCULATION DEVICE AND CALCULATION METHOD 审中-公开

    公开(公告)号：US20240201136A1

    公开(公告)日：2024-06-20

    申请号：US18506053

    申请日：2023-11-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Koji Murata ,  Fumie Machida ,  Seunghyun Kim

    IPC: G01N27/72

    CPC classification number: G01N27/72

    Abstract: A calculation device includes a calculation portion that divides a sample having a numerical solution applying portion, a connecting portion and an analytic solution applying portion into a plurality of cells, and calculates an electromagnetic field of each cell based on a physical property value associated with the cell. The calculation portion calculates the electromagnetic field of the numerical solution applying portion and the connecting portion by a numerical calculation using Maxwell's equations, Fourier transforms the calculated electromagnetic field of the connecting portion into a plane wave expressed by a wavenumber vector, sets the transformed plane wave as an initial value, calculates the a wavenumber space electromagnetic field by an analytic solution of Helmholtz's equation, when the plane wave propagates the analytic solution applying portion in the propagation direction, and calculates the electromagnetic field of the analytic solution applying portion by inverse Fourier-transforming the wavenumber space electromagnetic field.

    METHOD FOR PREDICTING DEFECT IN SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD FOR PREDICTING DEFECT IN SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220268830A1

    公开(公告)日：2022-08-25

    申请号：US17495487

    申请日：2021-10-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Taeyoon An ,  Sangwoon Lee ,  Sungjin Kim ,  Seunghyun Kim ,  Wonki Roh ,  Chulwoo Park ,  Seongjae Byeon ,  Joohyun Jeon ,  Hyoeun Jung

    IPC: G01R31/28 ,  G06F30/20 ,  G06N20/00 ,  G01T1/24

    Abstract: A method for predicting a defect in a semiconductor device includes: calculating a first probability that particles will be generated in a semiconductor element by radiation; calculating a second probability that damage will occur in the semiconductor element due to the particles; generating a training data set using input data and simulation data, the input data including damage data generated using the first probability and the second probability and including at least one of a position in which the damage will occur and an amount of the damage, impurity concentration of impurities doped in at least a portion of the semiconductor element, and structural data of the semiconductor element, and the simulation data including electrical characteristics of the semiconductor element obtained as a result of a simulation based on the input data; and training a machine learning model based on the training data set to generate a defect prediction model.

    SEMICONDUCTOR MEMORY DEVICES
    5.
    发明公开
    SEMICONDUCTOR MEMORY DEVICES 审中-公开

    公开(公告)号：US20240276703A1

    公开(公告)日：2024-08-15

    申请号：US18517126

    申请日：2023-11-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Wonsok Lee ,  Juho Lee ,  Seunghyun Kim ,  Wooje Jung ,  Minhee Cho

    IPC: H10B12/00

    CPC classification number: H10B12/315 ,  H10B12/033 ,  H10B12/05

    Abstract: A semiconductor memory device, which may include a substrate, a lower conductive line on the substrate, an isolation insulating layer on the lower conductive line and including a channel trench, a channel structure inside the channel trench and including a first oxide semiconductor material, an interfacial conductive pattern between the lower conductive line and a lower surface of the channel structure, a gate dielectric layer that covers the channel structure within the channel trench, an upper conductive line on the gate dielectric layer within the channel trench, a conductive contact pattern on the channel structure, an interfacial oxide semiconductor pattern between the channel structure and the conductive contact pattern and including a second oxide semiconductor material, and a capacitor structure including a lower electrode connected to the conductive contact pattern.

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