公开(公告)号：US20240373621A1

公开(公告)日：2024-11-07

申请号：US18627685

申请日：2024-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungmin SHIN ,  Kijong PARK ,  Sangjun PARK ,  Younggeun SONG ,  Ilyoung YOON ,  Yongjin LEE

IPC: H10B12/00

Abstract: In a method for manufacturing a semiconductor device, comprising; forming mold insulation patterns on a substrate, forming an oxide semiconductor layer conformally on sidewalls and upper surfaces of the mold insulation patterns and the substrate, forming a first metal oxide layer on the oxide semiconductor layer, patterning the first sacrificial layer, the first metal oxide layer, and the oxide semiconductor layer to form a first structure including a preliminary first metal oxide layer pattern, a preliminary oxide semiconductor layer pattern and a first sacrificial layer pattern stacked, forming a preliminary second metal oxide layer pattern selectively on a sidewall of the preliminary oxide semiconductor layer pattern, removing selective portions of the first structure and the preliminary second metal oxide layer pattern to form an oxide semiconductor layer pattern, a first metal oxide layer pattern, and a second metal oxide layer pattern.

公开(公告)号：US20240167156A1

公开(公告)日：2024-05-23

申请号：US18474738

申请日：2023-09-26

Applicant: SEMES CO., LTD. ,  Samsung Electronics Co., Ltd.

Inventor： Hyungseok KANG ,  Joonho WON ,  Pilkyun HEO ,  Hongchan CHO ,  Ilyoung KIM ,  Sangjine PARK ,  Seungmin SHIN ,  Jihwan PARK ,  Kuntack LEE

IPC: C23C16/455 ,  G03F7/00 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C16/45568 ,  G03F7/70033 ,  H01J37/32449

Abstract: A substrate processing apparatus includes a chamber configure to provide a space for processing a substrate, a substrate support configured to support the substrate in the chamber, an upper supply port provided in an upper portion of the chamber and configured to supply a supercritical fluid on an upper surface of the substrate, a recess provided in an upper wall of the chamber and having a diffuser shape whose diameter gradually increases from an outlet of the upper supply port, and a fluidic baffle disposed in the recess between the upper supply port and the substrate and including unit cells repeatedly arranged in a space with same phases and geometric sizes and in fluid communication with each other.

公开(公告)号：US20220230872A1

公开(公告)日：2022-07-21

申请号：US17398219

申请日：2021-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hunjae JANG ,  Seungmin SHIN ,  Kuntack LEE ,  Seungho KIM ,  Younghoo KIM ,  Taehong KIM ,  Sunghyun PARK

IPC: H01L21/02 ,  B08B3/10 ,  B08B7/00 ,  B08B3/08

Abstract: A wafer-cleaning apparatus includes an inner pin that supports a wafer. The wafer-cleaning apparatus further includes a nozzle disposed above the inner pin, a light source disposed under the inner pin, a window disposed between the light source and the wafer, and a window protector disposed between the wafer and the window. The nozzle supplies a chemical liquid to the wafer and the inner pin distributes a portion of the chemical liquid on an upper surface of the wafer by rotating the wafer. The window protector receives a portion of the chemical liquid that flows out of the wafer and the light source supplies the light to the wafer through the window protector and the window.