公开(公告)号：US20180040768A1

公开(公告)日：2018-02-08

申请号：US15438876

申请日：2017-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shiyoung LEE ,  Sun Hyun OH ,  Sung Jun PARK ,  Young Sub SHIN ,  Kyoyoung AHN ,  Chi-yoon LEE

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/22 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32

Abstract: A semiconductor light emitting device and a method of manufacturing a semiconductor light emitting device, the device including a substrate; a first conductive semiconductor layer on one surface of the substrate; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a plurality of protrusions on the second conductive semiconductor layer, the plurality of protrusions including an undoped semiconductor material, wherein an uneven complex surface structure including an unevenness that is a smaller size than a protrusion is formed in the second conductive semiconductor layer and is provided between the plurality of protrusions.