公开(公告)号：US10224213B2

公开(公告)日：2019-03-05

申请号：US15444381

申请日：2017-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungmun Byun ,  Sinhae Do ,  Badro Im

IPC: H01L21/308 ,  H01L21/28 ,  H01L21/3213

Abstract: A method for forming patterns of a semiconductor device includes sequentially forming a hard mask layer, a sacrificial layer, and an anti-reflection layer on a substrate, the substrate including a cell region and a peripheral circuit region, patterning the sacrificial layer to form a first sacrificial pattern on the cell region and a second sacrificial pattern on the peripheral circuit region, forming spacers covering sidewalls of the first and second sacrificial patterns, and removing the first sacrificial pattern. The anti-reflection layer includes a lower anti-reflection layer and an upper anti-reflection layer which are formed of materials different from each other. In the patterning of the sacrificial layer, the anti-reflection layer is patterned to form a first anti-reflection pattern on the first sacrificial pattern and a second anti-reflection pattern on the second sacrificial pattern. The second anti-reflection pattern remains when the first sacrificial pattern is removed.

公开(公告)号：US10290509B2

公开(公告)日：2019-05-14

申请号：US15443370

申请日：2017-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam-Gun Kim ,  Sangmin Lee ,  Sinhae Do ,  Seok-Won Cho ,  Taeseop Choi ,  Kon Ha

IPC: H01L21/311 ,  G03F7/20 ,  H01L21/033 ,  H01L21/308 ,  H01L27/108

Abstract: Example embodiments relate to a method for fabricating a semiconductor device. The method for fabricating a semiconductor device includes stacking on a substrate an etching target layer, a first mask layer, and a photoresist layer, irradiating extreme ultraviolet (EUV) radiation on the photoresist layer to form a photoresist pattern, patterning the first mask layer to form a first mask pattern using the photoresist pattern as an etching mask, and patterning the etching target layer to form a target pattern using the first mask pattern as an etching mask. The first mask layer includes at least one of a silicon layer and a titanium oxide layer.