公开(公告)号：US20180102260A1

公开(公告)日：2018-04-12

申请号：US15700491

申请日：2017-09-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun-Hye HWANG ,  Youn-Joung CHO ,  Won-Woong CHUNG ,  Nam-Gun KIM ,  Kong-Soo LEE ,  Badro IM ,  Yoon-Chul CHO

IPC: H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/32139 ,  C23C16/0272 ,  C23C16/04 ,  C23C16/24 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32055 ,  H01L27/10885

Abstract: A method of forming a pattern includes forming an etch target layer on a substrate, forming sacrificial patterns on the etch target layer, the sacrificial patterns including a carbon-containing material, providing a silicon-sulfur compound or a sulfur-containing gas onto the sacrificial patterns to form a seed layer, providing a silicon precursor onto the seed layer to form silicon-containing mask patterns, and at least partially etching the etch target layer using the mask patterns.