公开(公告)号：US20220085245A1

公开(公告)日：2022-03-17

申请号：US17308345

申请日：2021-05-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehun KIM ,  Yongmin KIM ,  Sungwon KO ,  Bokyoung KIM ,  Jinhwan KIM ,  Wongoo HUR

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/62

Abstract: A semiconductor light emitting device includes a first electrode layer, a light emitting structure on the first electrode layer, a transparent electrode layer between the first electrode layer and the light emitting structure, an interlayer insulating layer between the transparent electrode layer and the first electrode layer, and having first and second openings, a second electrode layer between the first electrode layer and the interlayer insulating layer, and connected to the transparent electrode layer, and an electrode pad contacting the second electrode layer, each of the first openings and at least one of the second openings define one group to have at least first and second groups, the first group being closer to the electrode pad than the second group is, and a distance between the first and second openings in the first group being greater than a distance between the first and second openings in the second group.

公开(公告)号：US20210057602A1

公开(公告)日：2021-02-25

申请号：US16844616

申请日：2020-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonghwan JANG ,  Jae-Yoon KIM ,  Sungwon KO ,  Junghee KWAK ,  Sangseok LEE ,  Suyeol LEE ,  Seungwan CHAE ,  Pun Jae CHOI

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/24 ,  H01L33/40

Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.

公开(公告)号：US20240211170A1

公开(公告)日：2024-06-27

申请号：US18365421

申请日：2023-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwansuk JUNG ,  Sungwon KO ,  Hoyoung CHANG ,  Youngjin CHO

IPC: G06F3/06 ,  G06F11/10

CPC classification number: G06F3/0658 ,  G06F3/061 ,  G06F3/0659 ,  G06F3/0673 ,  G06F11/1008

Abstract: An operation method of a memory controller includes sequentially transmitting a first read command for the first plane and a second read command for the second plane to the nonvolatile memory device, transmitting a first status read command corresponding to the first read command to the nonvolatile memory device, transmitting a first memory access command corresponding to the first read command to the nonvolatile memory device based on first status information, receiving first read data that is output from the nonvolatile memory device, skipping issuing of a status read command corresponding to the second read command and transmitting a second memory access command corresponding to the second read command to the nonvolatile memory device, after receiving the first read data, and receiving second read data that is output from the nonvolatile memory device.