公开(公告)号：US20230238485A1

公开(公告)日：2023-07-27

申请号：US17900269

申请日：2022-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonguk SEO ,  Donggun LEE ,  Jonghyun LEE ,  Myunggoo CHEONG ,  Seungwan CHAE ,  Youngjo TAK

IPC: H01L33/32 ,  H01L33/10 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L33/32 ,  H01L33/10 ,  H01L33/382 ,  H01L33/62

Abstract: A light emitting device includes a first light transmitting layer, a second light transmitting layer provided on the first light transmitting layer, a plurality of mesa structures provided on the second light transmitting layer and configured to generate light in an ultraviolet band, and passivation patterns provided on side surfaces of the plurality of mesa structures. Each of the plurality of mesa structures includes a first epitaxial pattern including an aluminum gallium nitride, a second epitaxial pattern provided on the first epitaxial pattern and including an aluminum gallium nitride, a third epitaxial pattern provided on the second epitaxial pattern and including an aluminum gallium nitride, and a fourth epitaxial pattern provided on the third epitaxial pattern and including a gallium nitride. A horizontal width of each of the plurality of mesa structures is in a range of about 5 μm to about 30 μm.

公开(公告)号：US20210057602A1

公开(公告)日：2021-02-25

申请号：US16844616

申请日：2020-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonghwan JANG ,  Jae-Yoon KIM ,  Sungwon KO ,  Junghee KWAK ,  Sangseok LEE ,  Suyeol LEE ,  Seungwan CHAE ,  Pun Jae CHOI

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/24 ,  H01L33/40

Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.

公开(公告)号：US20220320370A1

公开(公告)日：2022-10-06

申请号：US17569028

申请日：2022-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngkyu SUNG ,  Dooho JEONG ,  Myunggoo CHEONG ,  Seungwan CHAE

IPC: H01L33/24 ,  H01L27/15 ,  H01L33/60 ,  H01L33/22 ,  H01L33/62 ,  H01L33/42 ,  H01L33/32

Abstract: A semiconductor light emitting device package includes: a substrate; a first semiconductor layer including first regions including a first-type semiconductor material and having a first height, and a second region disposed between the first regions and having a second height lower than the first height; an active layer including disposed in the first regions, and emitting light of a predetermined wavelength band; a second semiconductor layer disposed on the active layer and formed of a second-type semiconductor material; a third semiconductor layer disposed on the second semiconductor layer, and formed of a second-type semiconductor material different from the second-type semiconductor material of the second semiconductor layer; a transparent electrode layer including disposed on the third semiconductor layer; and a reflective electrode layer electrically connected to the transparent electrode layer, respectively, and including portions overlapping the active layer in a vertical direction and a horizontal direction, respectively.