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公开(公告)号：US20180350872A1
公开(公告)日：2018-12-06
申请号：US15850232
申请日：2017-12-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Pun Jae CHOI , Jacob Chang-Lin TARN , Han Kyu SEONG , Jin Hyuk SONG , Yoon Joon CHOI
IPC: H01L27/15 , H01L33/06 , H01L33/18 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/62 , H01L25/075 , F21K9/232 , F21K9/235 , F21K9/237
CPC classification number: H01L27/156 , F21K9/232 , F21K9/235 , F21K9/237 , F21V31/005 , F21Y2115/10 , H01L25/0753 , H01L31/00 , H01L31/0352 , H01L31/035236 , H01L31/105 , H01L33/0079 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/502 , H01L33/505 , H01L33/60 , H01L33/62
Abstract: A semiconductor light emitting device includes a plurality of light emitting cells having first and second surface opposing each other, the plurality of light emitting cells including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer therebetween, an insulating layer on the second surface of the plurality of light emitting cells and having first and second openings defining a first contact region of the first conductivity-type semiconductor layer and a second contact region of the second conductivity-type semiconductor layer, respectively, a connection electrode on the insulating layer and connecting a first contact region and a second contact region of adjacent light emitting cells, a transparent support substrate on the first surface of the plurality of light emitting cells, and a transparent bonding layer between the plurality of light emitting cells and the transparent support substrate.
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2.发明申请公开(公告)号：US20150200327A1
公开(公告)日：2015-07-16
申请号：US14668932
申请日：2015-03-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hae Youn HWANG , Pun Jae CHOI , Jung Jae LEE
CPC classification number: H01L33/005 , H01L24/24 , H01L27/156 , H01L33/38 , H01L33/44 , H01L33/62 , H01L2933/0025 , H01L2933/0066
Abstract: A semiconductor light emitting device includes a substrate, a semiconductor laminate disposed on the substrate and divided to a plurality of light emitting cells with an isolation region, and a wiring unit electrically connecting the plurality of light emitting cells. A region of lateral surfaces of each of the light emitting cells in which the wiring unit is disposed has a slope gentler than slopes of other regions of the lateral surfaces of each of the light emitting cells.
Abstract translation: 一种半导体发光器件，包括衬底，设置在衬底上并被分离成具有隔离区域的多个发光单元的半导体层叠体，以及电连接多个发光单元的布线单元。 布置单元的每个发光单元的侧表面的区域的斜率比每个发光单元的侧表面的其它区域的斜率更缓慢。
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公开(公告)号：US20210057602A1
公开(公告)日：2021-02-25
申请号：US16844616
申请日：2020-04-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeonghwan JANG , Jae-Yoon KIM , Sungwon KO , Junghee KWAK , Sangseok LEE , Suyeol LEE , Seungwan CHAE , Pun Jae CHOI
Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.
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公开(公告)号：US20190017657A1
公开(公告)日：2019-01-17
申请号：US15908993
申请日：2018-03-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong Ho KIM , Pun Jae CHOI
Abstract: A filament type light emitting diode (LED) light source includes a plurality of LED modules, a coupler, and a common connection portion. The LED modules are in a polygonal prism structure and emit white light having different color temperatures or light of different wavelengths. Each LED module having a bar shape at a respective side surface of the polygonal prism structure and includes a first connection electrode and a second connection electrode. The coupler couples the LED modules to maintain the polygonal prism structure. The common connection portion is at one end of the polygonal prism structure and is commonly connected to the second connection electrode of each of the LED modules.
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Patent Agency Ranking
公开(公告)号：US20180351033A1
公开(公告)日：2018-12-06
申请号：US15992822
申请日：2018-05-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Pun Jae CHOI , Yu Seung KIM , Jin Bock LEE
CPC classification number: H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
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6.发明申请VERTICAL NITRIDE-BASED LIGHT EMITTING DIODE HAVING OHMIC CONTACT PATTERN AND METHOD OF MANUFACTURING THE SAME 审中-公开具有OHMIC接触图案的基于氮化物的发光二极管及其制造方法公开(公告)号：US20140106483A1
公开(公告)日：2014-04-17
申请号：US14109420
申请日：2013-12-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Bock LEE , Jin Hyun LEE , Hee Seok PARK , Pun Jae CHOI , Jong In YANG
IPC: H01L33/62
CPC classification number: H01L33/62 , H01L21/268 , H01L33/40 , H01L2924/0002 , H01L2924/00
Abstract: Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer.
Abstract translation: 提供了包括第一电极的垂直氮化物基LED; 设置在所述第一电极上的第一氮化物半导体层; 设置在所述第一氮化物半导体层上的有源层; 设置在所述有源层上的第二氮化物半导体层; 设置在所述第二氮化物半导体层上的欧姆接触图案; 设置在所述欧姆接触图案上的第二电极; 以及与第二电极电连接并设置在第二氮化物半导体层上的接合焊盘。
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公开(公告)号：US20140070263A1
公开(公告)日：2014-03-13
申请号：US14080455
申请日：2013-11-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Pun Jae CHOI , Yu Seung KIM , Jin Bock LEE
IPC: H01L33/40
CPC classification number: H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
Abstract translation: 提供一种半导体发光器件，其包括依次堆叠的导电衬底，第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层。 第一电极层和第一半导体层之间的接触面积为半导体发光元件的总面积的3〜13％，实现了高的发光效率。
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公开(公告)号：US20190019780A1
公开(公告)日：2019-01-17
申请号：US15941299
申请日：2018-03-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyoung Jun KIM , Yong Min KWON , Geun Woo KO , Pun Jae CHOI , Dong Ho KIM
IPC: H01L25/075 , H01L33/62 , H01L33/54 , H01L33/56
Abstract: A light emitting device package includes: a plurality of light emitting chips configured to emit respective wavelength lights, each chip comprising electrodes at a bottom of the chip to form a flip-chip structure; a plurality of wirings directly connected to the electrodes of the chips, respectively; a plurality of electrode pads disposed below the chips and directly connected to the wirings, respectively; and a molding member integrally formed in a single layer structure to cover upper surfaces and side surfaces of the chips, and including a translucent material having a predetermined transmittance, wherein the wirings are disposed below a lower surface of the molding member.
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公开(公告)号：US20170323999A1
公开(公告)日：2017-11-09
申请号：US15604469
申请日：2017-05-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Pun Jae CHOI , Yu Seung KIM , Jin Bock LEE
CPC classification number: H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
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