公开(公告)号：US20230051494A1

公开(公告)日：2023-02-16

申请号：US17975242

申请日：2022-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyung KIM ,  Eun Ji LEE ,  Ji Yean KIM ,  Tae Seong KIM ,  Jae Wook JOO

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/08

Abstract: A magnetic junction memory device is provided. The magnetic junction memory device including a sensing circuit including a sensing node, the sensing node being connected to a first end of a transistor and configured to change a voltage of the sensing node in accordance with a resistance of a magnetic junction memory cell, a gating voltage generator circuit configured to generate a gating voltage of the transistor using a reference resistor and a reference voltage, and a read circuit configured to read data from the magnetic junction memory cell using the reference voltage and the voltage of the sensing node.

公开(公告)号：US20220375505A1

公开(公告)日：2022-11-24

申请号：US17882790

申请日：2022-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyung KIM ,  Ji Yean KIM ,  Hyun Taek JUNG ,  Ji Eun KIM ,  Tae Seong KIM ,  Sang-Hoon JUNG ,  Jae Wook JOO

IPC: G11C11/16

Abstract: Magnetic junction memory devices and methods for writing data to memory devices are provided. The magnetic junction memory device includes a first memory bank including first magnetic junction memory cells, a first local write driver adjacent to the first memory bank, connected to global data lines, the first local write driver configured to write data to the first magnetic junction memory cells via local data lines, a second memory bank adjacent to the first memory bank and including second magnetic junction memory cells, a second local write driver adjacent to the second memory bank, connected to the global data lines, the second local write driver configured to write data to the second magnetic junction memory cells via local data lines, and a global write driver configured to provide first and second write data to the first and second local write driver, respectively, via the global data lines.

公开(公告)号：US20240395745A1

公开(公告)日：2024-11-28

申请号：US18433177

申请日：2024-02-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Kyoung LEE ,  Tae Seong KIM ,  Ho-Jin LEE ,  Dong-Chan LIM ,  Jae Won HWANG

IPC: H01L23/00 ,  H01L27/146

Abstract: The present disclosure provides a semiconductor device manufacturing method that includes forming a lower chip and an upper chip, and bonding the lower chip and the upper chip to each other. The forming of the lower chip includes providing a lower substrate, sequentially forming a lower interlayer insulating film and a pre-lower adhesive film, etching portions of the pre-lower adhesive film and the lower interlayer insulating film to form a lower trench, forming, using a sputtering process, a first lower seed film and a second lower seed film. The forming of the upper chip includes providing an upper substrate, sequentially forming an upper interlayer insulating film and a pre-upper adhesive film, etching portions of the pre-upper adhesive film and the upper interlayer insulating film to form an upper trench, forming, using the sputtering process, a first upper seed film and a second upper seed film.

公开(公告)号：US20210027823A1

公开(公告)日：2021-01-28

申请号：US16848140

申请日：2020-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyung KIM ,  Ji Yean KIM ,  Hyun Taek JUNG ,  Ji Eun KIM ,  Tae Seong KIM ,  Sang-Hoon JUNG ,  Jae Wook JOO

IPC: G11C11/16

Abstract: Magnetic junction memory devices and methods for writing data to memory devices are provided. The magnetic junction memory device includes a first memory bank including first magnetic junction memory cells, a first local write driver adjacent to the first memory bank, connected to global data lines, the first local write driver configured to write data to the first magnetic junction memory cells via local data lines, a second memory bank adjacent to the first memory bank and including second magnetic junction memory cells, a second local write driver adjacent to the second memory bank, connected to the global data lines, the second local write driver configured to write data to the second magnetic junction memory cells via local data lines, and a global write driver configured to provide first and second write data to the first and second local write driver, respectively, via the global data lines.

公开(公告)号：US20210020692A1

公开(公告)日：2021-01-21

申请号：US16798615

申请日：2020-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyung KIM ,  Eun Ji LEE ,  Ji Yean KIM ,  Tae Seong KIM ,  Jae Wook JOO

IPC: H01L27/22 ,  H01L43/08 ,  G11C11/16

Abstract: A magnetic junction memory device is provided. The magnetic junction memory device including a sensing circuit including a sensing node, the sensing node being connected to a first end of a transistor and configured to change a voltage of the sensing node in accordance with a resistance of a magnetic junction memory cell, a gating voltage generator circuit configured to generate a gating voltage of the transistor using a reference resistor and a reference voltage, and a read circuit configured to read data from the magnetic junction memory cell using the reference voltage and the voltage of the sensing node.