公开(公告)号：US20250157896A1

公开(公告)日：2025-05-15

申请号：US18824553

申请日：2024-09-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine PARK ,  Youngjun KIM ,  Taesun KIM

IPC: H01L23/495 ,  H01L23/498 ,  H01L27/092

Abstract: An integrated circuit device includes: a substrate including a backside surface; fin-type active regions protruding from the substrate such as to define a trench region on the substrate; a device isolation layer covering, in the trench region, a side wall of each of the fin-type active regions; a via power rail vertically extending through the device isolation layer between the fin-type active regions; and a backside power rail vertically extending through the substrate and connected to one end of the via power rail, wherein the via power rail includes a first portion connected to the backside power rail and a second portion on the first portion, and wherein two side walls of the first portion each include an inclined surface that is inclined such as to come closer to the pair of fin-type active regions as the two side walls approach the backside power rail.

公开(公告)号：US20240290866A1

公开(公告)日：2024-08-29

申请号：US18540280

申请日：2023-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonhyuk HONG ,  Jongjin LEE ,  Taesun KIM ,  Myunghoon JUNG ,  Kang-ill SEO

IPC: H01L29/66 ,  H01L21/8234 ,  H01L23/528 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/66545 ,  H01L21/823437 ,  H01L21/823475 ,  H01L23/5286 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: A system and a method are disclosed for forming a bottle-neck shaped backside contact structure in a semiconductor device, wherein the bottle-neck shaped backside contact structure has a first side partially within the first source/drain structure, a second side contacting a backside power rail, and a liner extending from the first side to the backside power rail. The liner includes a first region comprised of either a Ta silicide liner or a Ti silicide liner, a second region comprised of a Ti/TiN liner and a third region comprised of either a Ta silicide liner or a Ti silicide liner. The backside contact structure includes a first portion having a positive slope and a second portion, adjacent to the first portion, having no slope.