公开(公告)号：US09257389B2

公开(公告)日：2016-02-09

申请号：US14448115

申请日：2014-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WooJin Jang ,  Kyoungwoo Lee

IPC: H01L23/48 ,  H01L23/522 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/53238 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L2224/13

Abstract: A method of forming a metal interconnection of semiconductor device is provided. The method includes forming a low-k dielectric layer including an opening; forming a barrier metal pattern conformally covering a bottom surface and an inner sidewall of the opening; forming a metal pattern exposing a part of the inner sidewall of the barrier metal pattern in the opening; forming a metal capping layer on the top surfaces of the metal pattern and the low-k dielectric layer using a selective chemical vapor deposition process, wherein the thickness of the metal capping layer on the metal pattern is greater than the thickness of the metal capping layer on the low-k dielectric layer; and forming a metal capping pattern covering the top surface of the metal pattern by planarizing the metal capping layer down to the top surface of the low-k dielectric layer.

Abstract translation: 提供一种形成半导体器件的金属互连的方法。 该方法包括形成包括开口的低k电介质层; 形成保形地覆盖所述开口的底部表面和内侧壁的阻挡金属图案; 形成露出所述开口中的所述阻挡金属图案的内侧壁的一部分的金属图案; 使用选择性化学气相沉积工艺在金属图案和低k电介质层的顶表面上形成金属覆盖层，其中金属图案上的金属覆盖层的厚度大于金属覆盖层的厚度 在低k电介质层上; 以及通过将金属覆盖层平坦化到低k电介质层的顶表面来形成覆盖金属图案的顶表面的金属覆盖图案。

公开(公告)号：US20230087072A1

公开(公告)日：2023-03-23

申请号：US17736173

申请日：2022-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangmin Kang ,  Hyungjoon Kim ,  WooJin Jang

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573

Abstract: A method of fabricating an integrated circuit device includes forming on a semiconductor substrate a mold stack that includes a plurality of insulating layers and a plurality of mold layers alternately arranged. A mask pattern including an opening is formed on the mold stack. A channel hole is formed by removing the mold stack exposed through the opening. A sacrificial film is formed on a lateral wall of the mold stack exposed through the channel hole. An oxidation process is performed on the sacrificial film and the mold stack to convert the sacrificial film to a sacrificial oxide film. An etching process is performed to remove the sacrificial oxide film.