公开(公告)号：US09378837B2

公开(公告)日：2016-06-28

申请号：US14805176

申请日：2015-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moo Sung Kim ,  Wook Ghee Hahn

IPC: G11C16/26 ,  G11C11/56 ,  G11C16/04 ,  G11C16/10

CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10

Abstract: A method of providing an operating voltage in a memory device includes applying a read voltage to a selected word line while applying a first pass voltage to at least one unselected word line among word lines adjacent to the selected word line; and while applying a second pass voltage to the remaining unselected word lines (other than the at least one unselected word line to which the first pass voltage is applied). The level of the first pass voltage is higher than the level of the second pass voltage. The level of the first pass voltage may be set based on the level of the read voltage.

公开(公告)号：US09129697B2

公开(公告)日：2015-09-08

申请号：US14458453

申请日：2014-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moo Sung Kim ,  Wook Ghee Hahn

IPC: G11C16/04 ,  G11C16/26 ,  G11C11/56 ,  G11C16/10

CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10

Abstract: A method of providing an operating voltage in a memory device includes applying a read voltage to a selected word line while applying a first pass voltage to at least one unselected word line among word lines adjacent to the selected word line; and while applying a second pass voltage to the remaining unselected word lines (other than the at least one unselected word line to which the first pass voltage is applied). The level of the first pass voltage is higher than the level of the second pass voltage. The level of the first pass voltage may be set based on the level of the read voltage.

Abstract translation: 一种在存储器件中提供工作电压的方法包括：将一个读取电压施加到所选择的字线上，同时对与所选择的字线相邻的字线中的至少一个未选择的字线施加第一通过电压; 并且在剩余的未选择字线（除了施加了第一通过电压的至少一个未选择的字线之外）施加第二通过电压的同时。 第一通过电压的电平高于第二通过电压的电平。 可以基于读取电压的电平来设置第一通过电压的电平。