公开(公告)号：US11532328B2

公开(公告)日：2022-12-20

申请号：US16375157

申请日：2019-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Young Jee ,  Sung Ki Roh ,  Min Uk Kim ,  Sung Soo Kim ,  Woong Sik Nam ,  Sung-Gyu Park ,  Se Young Oh

IPC: B05D3/06 ,  G11B7/095 ,  F01C1/12 ,  H01L21/67

Abstract: A multi-curing apparatus includes an actuator, a first chamber including a first energy source head, a second chamber including a second energy source head, a first driver including a first rotation transmission gear gear-engaged with the actuator, and a first driving gear gear-engaged with the first chamber. The apparatus further includes a second driver including a second rotation transmission gear gear-engaged with the actuator, and a second driving gear gear-engaged with the second chamber. The apparatus aligns a position of the first chamber with reference to a position of the second chamber while the first rotation transmission gear, the second rotation transmission gear, and the second driving gear are fixed.

公开(公告)号：US11569349B2

公开(公告)日：2023-01-31

申请号：US17333080

申请日：2021-05-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Jun Kim ,  Woong Sik Nam ,  Mirco Cantoro

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L21/8234

Abstract: A semiconductor device includes first and second active patterns, a field insulating film between the first and second active patterns, a first gate structure intersecting the first active pattern and including a first gate electrode and a first gate spacer, a second gate structure intersecting the second active pattern and including a second gate electrode and a second gate spacer, a gate separation structure on the field insulating film between the first and second gate structures, the gate separation structure including a gate separation filling film on a gate separation liner, and a connecting spacer between the gate separation structure and the field insulating film, the connecting spacer protruding from a top surface of the field insulating film, and the gate separation liner contacting the connecting spacer and extending along a top surface and sidewalls of the connecting spacer and along the top surface of the field insulating film.

公开(公告)号：US11955516B2

公开(公告)日：2024-04-09

申请号：US18102204

申请日：2023-01-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ho-Jun Kim ,  Woong Sik Nam ,  Mirco Cantoro

IPC: H01L29/06 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/0673 ,  H01L21/823481 ,  H01L29/4236 ,  H01L29/6656

Abstract: A semiconductor device includes first and second active patterns, a field insulating film between the first and second active patterns, a first gate structure intersecting the first active pattern and including a first gate electrode and a first gate spacer, a second gate structure intersecting the second active pattern and including a second gate electrode and a second gate spacer, a gate separation structure on the field insulating film between the first and second gate structures, the gate separation structure including a gate separation filling film on a gate separation liner, and a connecting spacer between the gate separation structure and the field insulating film, the connecting spacer protruding from a top surface of the field insulating film, and the gate separation liner contacting the connecting spacer and extending along a top surface and sidewalls of the connecting spacer and along the top surface of the field insulating film.

公开(公告)号：US11728409B2

公开(公告)日：2023-08-15

申请号：US17112357

申请日：2020-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun Hye Lee ,  Sung Soo Kim ,  Ik Soo Kim ,  Woong Sik Nam ,  Dong Hyun Roh

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  B82Y10/00

CPC classification number: H01L29/6656 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/66545 ,  H01L29/66553 ,  B82Y10/00

Abstract: A semiconductor device includes first and second active patterns each extending in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction. A field insulating layer is disposed between the first active pattern and the second active pattern. A first gate structure is disposed on the first active pattern and extends in the second direction. An interlayer insulating layer is disposed between the first gate structure and the field insulating layer. The interlayer insulating layer includes a first part disposed below the first gate structure. A spacer is disposed between the first gate structure and the first part of the interlayer insulating layer.