公开(公告)号：US12073887B2

公开(公告)日：2024-08-27

申请号：US17744942

申请日：2022-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanggyu Ko ,  Yeongmin Yoo

IPC: G11C16/16 ,  G11C16/04 ,  G11C16/10 ,  G11C16/34

CPC classification number: G11C16/16 ,  G11C16/0483 ,  G11C16/107 ,  G11C16/3404 ,  G11C16/349 ,  G11C2216/16 ,  G11C2216/18

Abstract: An operating method of a semiconductor device including a controller and a non-volatile memory device operating under control of the controller is provided. The operating method includes determining, by the controller, whether the non-volatile memory device satisfies a block program condition; based on the non-volatile memory device satisfying the block program condition, performing a block program operation a plurality of times; and based the non-volatile memory device not satisfying the block program condition, performing an erase operation.

公开(公告)号：US12237022B2

公开(公告)日：2025-02-25

申请号：US17983705

申请日：2022-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanggyu Ko ,  Yeongmin Yoo

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/16

Abstract: A semiconductor device includes a memory device and a controller configured to perform an erase operation on the memory device, perform a correction operation for a threshold voltage of a deep-erased cell, and perform an erase verify operation by identifying whether threshold voltages of a plurality of cells of the memory device fall within a predefined range.

公开(公告)号：US12073904B2

公开(公告)日：2024-08-27

申请号：US17888191

申请日：2022-08-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanggyu Ko ,  Yeongmin Yoo ,  Jongpil Kim

IPC: G11C29/52 ,  G11C16/10 ,  G11C16/34

CPC classification number: G11C29/52 ,  G11C16/102 ,  G11C16/3495

Abstract: An operating method of a storage controller which communicates with a non-volatile memory device is provided. The method includes determining whether a program/erase (P/E) count of a target page including a plurality of sectors is greater than or equal to a P/E threshold value; based on determining that the P/E count of the target page is greater than or equal to the P/E threshold value, fetching the target page; determining a first sector having high reliability and a second sector having low reliability from the plurality of sectors of the fetched target page; and expanding a second parity area of the second sector by moving a margin region in a first parity area of the first sector to the second parity area of the second sector.