公开(公告)号：US20180190780A1

公开(公告)日：2018-07-05

申请号：US15652396

申请日：2017-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bok-Young LEE ,  Sung-Woo KANG ,  Sang-Hyun LEE ,  Hak-Yoon AHN ,  Young-Mook OH ,  In-Keun LEE ,  Seong-Han OH ,  Young-Hun CHOI

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/08 ,  H01L29/45 ,  H01L21/8234 ,  H01L23/535 ,  H01L27/088

CPC classification number: H01L29/41791 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/535 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device includes an active region in a shape of a fin extending in a first direction, the fin having source/drain regions spaced apart therein, gate structures crossing the fin between the source/drain regions, each including a gate electrode, a first contact structure in electrical contact with a first source/drain region, the first contact structure including a first lower contact and a first upper contact directly thereon, a second contact structure in electrical contact with a gate electrode of a gate structure, the second contact structure including a second lower contact and a second upper contact directly thereon, and a third contact structure in electrical contact with a gate electrode of a second gate structure and in electrical contact with a second source drain region, the third contact structure including a third lower contact and a third upper contact directly thereon.