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公开(公告)号：US20180090589A1
公开(公告)日：2018-03-29
申请号：US15820171
申请日：2017-11-21
发明人： Hyun-Kwan Yu , Kooktae Kim , Chanjin Park , Dongsuk Shin , Youngdal Lim , Sahwan Hong
IPC分类号： H01L29/49 , H01L27/088 , H01L21/8234 , H01L29/06 , H01L29/165 , H01L29/161 , H01L29/16 , H01L29/08 , H01L29/78
CPC分类号： H01L29/4991 , H01L21/7682 , H01L21/76897 , H01L21/823431 , H01L21/823481 , H01L23/485 , H01L27/0886 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/41791 , H01L29/66545 , H01L29/7848
摘要： A semiconductor device includes a gate assembly disposed on a device isolation layer, a gate spacer disposed on a side surface of the gate assembly, a contact assembly disposed on the gate spacer, an air gap disposed between the device isolation layer and the contact assembly, and a first spacer capping layer disposed between the gate spacer and the air gap. The first spacer capping layer has an etch selectivity with respect to the gate spacer.
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公开(公告)号：US09865698B2
公开(公告)日：2018-01-09
申请号：US15053842
申请日：2016-02-25
发明人： Hyun-Kwan Yu , Kooktae Kim , Chanjin Park , Dongsuk Shin , Youngdal Lim , Sahwan Hong
IPC分类号： H01L27/108 , H01L29/49 , H01L29/08 , H01L29/16 , H01L29/161 , H01L29/165 , H01L29/78 , H01L29/06 , H01L21/8234 , H01L27/088
CPC分类号： H01L29/4991 , H01L21/7682 , H01L21/76897 , H01L21/823431 , H01L21/823481 , H01L23/485 , H01L27/0886 , H01L29/0653 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/66545 , H01L29/7848
摘要： A semiconductor device includes a gate assembly disposed on a device isolation layer, a gate spacer disposed on a side surface of the gate assembly, a contact assembly disposed on the gate spacer, an air gap disposed between the device isolation layer and the contact assembly, and a first spacer capping layer disposed between the gate spacer and the air gap. The first spacer capping layer has an etch selectivity with respect to the gate spacer.
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