公开(公告)号：US20230369212A1

公开(公告)日：2023-11-16

申请号：US18117623

申请日：2023-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Tae SUNG ,  Yun Sun Jang ,  Moo Rym Choi

IPC: H01L23/528 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40

CPC classification number: H01L23/5283 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40

Abstract: A nonvolatile memory device includes a plurality of metal lines extending in a first direction and stacked in a second direction crossing the first direction, a plurality of cell structures passing through the plurality of metal lines and extending in the second direction, a plurality of extension regions, a plate common source line contact connected with a common source line, extending in the first direction, and formed in least two of the plurality of extension regions that are not formed with the plurality of cell structures, and input/output metal contacts connected with an external connection pad, extending in the first direction, and formed with at least two of the plurality of extension regions that are not formed with the plate common source line contact.

公开(公告)号：US20230371255A1

公开(公告)日：2023-11-16

申请号：US18152211

申请日：2023-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： MOO RYM CHOI ,  Jung Tae Sung ,  Yun Sun Jang

IPC: H10B43/27 ,  H10B80/00

CPC classification number: H10B43/27 ,  H10B80/00

Abstract: Provided are a memory device, a method of fabricating the same, and an electronic system including the same. The memory device includes a peripheral circuit structure and a cell structure on the peripheral circuit structure. The cell structure comprises a cell substrate including a first surface facing the peripheral circuit structure and a second surface opposite to the first surface and having a first conductivity type, gate electrodes on the first surface of the cell substrate, a channel structure intersecting the gate electrodes and connected to the cell substrate, a first impurity region that is in the cell substrate adjacent to the second surface and has a second conductivity type, and a second impurity region that is in the cell substrate and is spaced apart from the first impurity region, the second impurity region having the first conductivity type with a higher impurity concentration than that of the cell substrate.