公开(公告)号：US20180248035A1

公开(公告)日：2018-08-30

申请号：US15670154

申请日：2017-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Il PARK ,  Beom-Jin PARK ,  Yun-Il LEE ,  Jung-Gun YOU ,  Dong-Hun LEE

IPC: H01L29/78 ,  H01L29/788 ,  H01L27/11556 ,  H01L27/092 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/7827 ,  H01L21/823418 ,  H01L21/823487 ,  H01L27/0738 ,  H01L27/088 ,  H01L27/0924 ,  H01L27/11556 ,  H01L27/1203 ,  H01L29/4232 ,  H01L29/66666 ,  H01L29/7889 ,  H01L2027/11866

Abstract: A vertical transistor structure includes a first transistor and a second transistor. The first transistor includes a first lower electrode connected to a second upper electrode of the second transistor, and a second upper electrode connected to a first lower electrode of the second transistor. The first transistor also includes a gate electrode connected to a gate electrode of the second transistor.