公开(公告)号：US20220238707A1

公开(公告)日：2022-07-28

申请号：US17659571

申请日：2022-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Gil YANG ,  Beom-Jin PARK ,  Seung-Min SONG ,  Geum-Jong BAE ,  Dong-Il BAE

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/308 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/786 ,  H01L29/423 ,  H01L29/775

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.

公开(公告)号：US20180248035A1

公开(公告)日：2018-08-30

申请号：US15670154

申请日：2017-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Il PARK ,  Beom-Jin PARK ,  Yun-Il LEE ,  Jung-Gun YOU ,  Dong-Hun LEE

IPC: H01L29/78 ,  H01L29/788 ,  H01L27/11556 ,  H01L27/092 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/7827 ,  H01L21/823418 ,  H01L21/823487 ,  H01L27/0738 ,  H01L27/088 ,  H01L27/0924 ,  H01L27/11556 ,  H01L27/1203 ,  H01L29/4232 ,  H01L29/66666 ,  H01L29/7889 ,  H01L2027/11866

Abstract: A vertical transistor structure includes a first transistor and a second transistor. The first transistor includes a first lower electrode connected to a second upper electrode of the second transistor, and a second upper electrode connected to a first lower electrode of the second transistor. The first transistor also includes a gate electrode connected to a gate electrode of the second transistor.