公开(公告)号：US20230307217A1

公开(公告)日：2023-09-28

申请号：US18123068

申请日：2023-03-17

Applicant: SAMSUNG-ELECTRONICS CO., LTD.

Inventor： Dooyoung Gwak ,  Soonam Park ,  Janggyoo Yang ,  Myungsun Choi ,  Jaemin Ha

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/66

CPC classification number: H01J37/32862 ,  H01J37/32743 ,  H01L21/31144 ,  H01L21/31116 ,  H01L22/10 ,  H01J37/32788 ,  H01J2237/3343 ,  H01J2237/24485

Abstract: An operation method of an etching apparatus includes transferring, from a load lock chamber to a process chamber, a substrate on which an etching target layer is formed, first etching the etching target layer on the substrate in a first etching time, transferring the substrate to a storage location in a state in a vacuum state, intermediate cleaning the process chamber in a first cleaning time, transferring the substrate from the storage location to the process chamber, second etching the etching target layer on the substrate in a second etching time, and returning the substrate to the load lock chamber. The etching target layer is formed in a predetermined etching pattern by the first etching and the second etching.