公开(公告)号：US09601508B2

公开(公告)日：2017-03-21

申请号：US14921385

申请日：2015-10-23

申请人： SANDISK TECHNOLOGIES INC.

发明人： Jongsun Sel ,  Chan Park ,  Atsushi Suyama ,  Frank Yu ,  Hiroyuki Ogawa ,  Ryoichi Honma ,  Kensuke Yamaguchi ,  Hiroaki Iuchi ,  Naoki Takeguchi ,  Tuan Pham ,  Kiyohiko Sakakibara ,  Jiao Chen

IPC分类号： H01L27/115 ,  H01L29/04 ,  H01L29/16 ,  H01L21/02 ,  H01L29/788 ,  H01L21/28 ,  H01L21/311

CPC分类号： H01L27/11582 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31111 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11578 ,  H01L29/04 ,  H01L29/16 ,  H01L29/7883

摘要： An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. After formation of a memory opening, all surfaces of the memory opening are provided as silicon oxide surfaces by formation of at least one silicon oxide portion. A silicon nitride layer is formed in the memory opening. After formation of a memory stack structure, backside recesses can be formed employing the silicon oxide portions as an etch stop. The silicon oxide portions can be subsequently removed employing the silicon nitride layer as an etch stop. Physically exposed portions of the silicon nitride layer can be removed selective to the memory stack structure. Damage to the outer layer of the memory stack structure can be minimized or eliminated by successive use of etch stop structures. Electrically conductive layers can be subsequently formed in the backside recesses.

公开(公告)号：US20160315095A1

公开(公告)日：2016-10-27

申请号：US14921385

申请日：2015-10-23

申请人： SANDISK TECHNOLOGIES INC.

发明人： Jongsun Sel ,  Chan Park ,  Atsushi Suyama ,  Frank Yu ,  Hiroyuki Ogawa ,  Ryoichi Honma ,  Kensuke Yamaguchi ,  Hiroaki Iuchi ,  Naoki Takeguchi ,  Tuan Pham ,  Kiyohiko Sakakibara ,  Jiao Chen

IPC分类号： H01L27/115 ,  H01L29/16 ,  H01L21/311 ,  H01L29/788 ,  H01L21/28 ,  H01L29/04 ,  H01L21/02

CPC分类号： H01L27/11582 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31111 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11578 ,  H01L29/04 ,  H01L29/16 ,  H01L29/7883

摘要： An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. After formation of a memory opening, all surfaces of the memory opening are provided as silicon oxide surfaces by formation of at least one silicon oxide portion. A silicon nitride layer is formed in the memory opening. After formation of a memory stack structure, backside recesses can be formed employing the silicon oxide portions as an etch stop. The silicon oxide portions can be subsequently removed employing the silicon nitride layer as an etch stop. Physically exposed portions of the silicon nitride layer can be removed selective to the memory stack structure. Damage to the outer layer of the memory stack structure can be minimized or eliminated by successive use of etch stop structures. Electrically conductive layers can be subsequently formed in the backside recesses.

摘要翻译： 绝缘层和牺牲材料层的交替堆叠形成在衬底上。 在形成存储器开口之后，通过形成至少一个氧化硅部分，将存储器开口的所有表面设置为氧化硅表面。 在存储器开口中形成氮化硅层。 在形成存储器堆叠结构之后，可以使用氧化硅部分作为蚀刻停止来形成背面凹部。 随后可以使用氮化硅层作为蚀刻停止物去除氧化硅部分。 氮化硅层的物理暴露部分可以被选择性地移除到存储器堆叠结构。 可以通过连续使用蚀刻停止结构来最小化或消除对存储器堆叠结构的外层的损坏。 随后可以在背面凹槽中形成导电层。