公开(公告)号：US09953697B2

公开(公告)日：2018-04-24

申请号：US15251818

申请日：2016-08-30

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Tanmay Kumar ,  Alper Ilkbahar

IPC: G11C11/4091 ,  H01L45/00 ,  H01L27/24 ,  G11C13/00

CPC classification number: G11C11/4091 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/003 ,  G11C13/0033 ,  G11C13/004 ,  G11C2013/0045 ,  G11C2213/15 ,  G11C2213/71 ,  H01L27/249 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/146

Abstract: A volatile resistive memory device includes a resistive memory element including a barrier material portion and a charge-modulated resistive memory material portion. The barrier material portion includes a material selected from germanium and a silicon-germanium alloy, and the charge-modulated resistive memory material portion includes a non-filamentary, electrically conductive metal oxide. The resistive memory device may be a volatile eDRAM device. In operation, reading a resistance state of the resistive memory element does not disturb the resistance state of the charge-modulated resistive memory material portion.