公开(公告)号：US10229723B1

公开(公告)日：2019-03-12

申请号：US15701761

申请日：2017-09-12

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Young-Suk Choi ,  Brian York ,  Neil Smith

IPC: G11C11/22 ,  G11C11/16 ,  G11C11/18 ,  H01L43/10 ,  H01L43/06 ,  H01L43/04 ,  H01L43/08

Abstract: A spin orbit torque magnetoresistive random access memory (SOT MRAM) cell includes a magnetic tunnel junction that contains a free layer having two bi-stable magnetization directions, a reference magnetic layer having a fixed magnetization direction, and a tunnel barrier layer located between the free layer and the reference layer, and a nonmagnetic spin Hall effect layer. The spin Hall effect layer may include an alternating stack of beta phase tungsten layers and noble metal nonmagnetic dusting layers. Alternatively or in addition, a hafnium layer may be located between the nonmagnetic spin Hall effect layer and the free layer.