公开(公告)号：US10886459B2

公开(公告)日：2021-01-05

申请号：US16449895

申请日：2019-06-24

Applicant: SanDisk Technologies LLC

Inventor： Young-Suk Choi ,  Won Ho Choi

IPC: G11C7/00 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16 ,  G06N3/063 ,  G06N3/04 ,  G11C11/00 ,  G11C11/54 ,  G11C11/401

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.

公开(公告)号：US10229723B1

公开(公告)日：2019-03-12

申请号：US15701761

申请日：2017-09-12

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Young-Suk Choi ,  Brian York ,  Neil Smith

IPC: G11C11/22 ,  G11C11/16 ,  G11C11/18 ,  H01L43/10 ,  H01L43/06 ,  H01L43/04 ,  H01L43/08

Abstract: A spin orbit torque magnetoresistive random access memory (SOT MRAM) cell includes a magnetic tunnel junction that contains a free layer having two bi-stable magnetization directions, a reference magnetic layer having a fixed magnetization direction, and a tunnel barrier layer located between the free layer and the reference layer, and a nonmagnetic spin Hall effect layer. The spin Hall effect layer may include an alternating stack of beta phase tungsten layers and noble metal nonmagnetic dusting layers. Alternatively or in addition, a hafnium layer may be located between the nonmagnetic spin Hall effect layer and the free layer.

公开(公告)号：US20210083173A1

公开(公告)日：2021-03-18

申请号：US17109291

申请日：2020-12-02

Applicant: SanDisk Technologies LLC

Inventor： Young-Suk Choi ,  Won Ho Choi

IPC: H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16 ,  G06N3/063 ,  G06N3/04 ,  G11C11/00 ,  G11C11/54

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.

公开(公告)号：US10347824B2

公开(公告)日：2019-07-09

申请号：US15820274

申请日：2017-11-21

Applicant: SanDisk Technologies LLC

Inventor： Young-Suk Choi

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01F10/32 ,  G11C11/16 ,  H01L43/12

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data includes a fixed layer, a barrier layer, and a composite free layer. A barrier layer is disposed between a fixed layer and a composite free layer. A composite free layer includes a ferromagnetic amorphous layer and an in-plane anisotropy free layer. A spin Hall effect (SHE) layer may be coupled to the composite free layer of the magnetic tunnel junction. The SHE layer may be configured such that an in-plane electric current within the SHE layer causes a spin current in the composite free layer.

公开(公告)号：US10886458B2

公开(公告)日：2021-01-05

申请号：US16449876

申请日：2019-06-24

Applicant: SanDisk Technologies LLC

Inventor： Young-Suk Choi ,  Won Ho Choi

IPC: G11C11/00 ,  H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08 ,  G11C11/54 ,  G11C11/401 ,  G11C11/41

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data may include a reference layer, a barrier layer, and a free layer. A barrier layer may be disposed between a reference layer and a free layer. A free layer may include a nucleation region and an arm. A nucleation region may be configured to form a magnetic domain wall. An arm may be narrower than a nucleation region and may extend from the nucleation region. An arm may include a plurality of pinning sites formed at predetermined locations along the arm for pinning a domain wall.

公开(公告)号：US10374148B1

公开(公告)日：2019-08-06

申请号：US15959837

申请日：2018-04-23

Applicant: SanDisk Technologies LLC

Inventor： Young-Suk Choi ,  Won Ho Choi

IPC: G11C7/00 ,  G11C11/14 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  G06N3/04 ,  G11C11/16 ,  G06N3/063

CPC classification number: H01L43/02 ,  G06N3/04 ,  G06N3/063 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/08

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.

公开(公告)号：US10347310B2

公开(公告)日：2019-07-09

申请号：US15613129

申请日：2017-06-02

Applicant: SanDisk Technologies LLC

Inventor： Young-Suk Choi

IPC: H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16 ,  G11C11/18 ,  H01L43/04 ,  H01L43/06

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data includes a fixed layer, a barrier layer, and a composite free layer. A barrier layer is disposed between a fixed layer and a composite free layer. A composite free layer includes an in-plane anisotropy free layer, a perpendicular magnetic anisotropy (PMA) inducing layer, and a ferromagnetic amorphous layer. A PMA-inducing layer may be disposed such that an in-plane anisotropy free layer is between a barrier layer and the PMA-inducing layer. A ferromagnetic amorphous layer may be disposed between an in-plane anisotropy free layer and a PMA-inducing layer.

公开(公告)号：US20180351087A1

公开(公告)日：2018-12-06

申请号：US15820274

申请日：2017-11-21

Applicant: SanDisk Technologies LLC

Inventor： Young-Suk Choi

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01L43/12 ,  H01F10/32 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/165 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/222 ,  H01L43/06 ,  H01L43/10 ,  H01L43/12

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data includes a fixed layer, a barrier layer, and a composite free layer. A barrier layer is disposed between a fixed layer and a composite free layer. A composite free layer includes a ferromagnetic amorphous layer and an in-plane anisotropy free layer. A spin Hall effect (SHE) layer may be coupled to the composite free layer of the magnetic tunnel junction. The SHE layer may be configured such that an in-plane electric current within the SHE layer causes a spin current in the composite free layer.

公开(公告)号：US11515472B2

公开(公告)日：2022-11-29

申请号：US17109291

申请日：2020-12-02

Applicant: SanDisk Technologies LLC

Inventor： Young-Suk Choi ,  Won Ho Choi

IPC: G11C7/00 ,  G11C11/14 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16 ,  G06N3/063 ,  G06N3/04 ,  G11C11/00 ,  G11C11/54 ,  G11C11/401

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.

公开(公告)号：US20190312196A1

公开(公告)日：2019-10-10

申请号：US16449895

申请日：2019-06-24

Applicant: SanDisk Technologies LLC

Inventor： Young-Suk Choi ,  Won Ho Choi

IPC: H01L43/02 ,  G11C11/16 ,  G06N3/063 ,  H01L43/08 ,  G06N3/04 ,  H01L27/22

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.