公开(公告)号：US09953692B1

公开(公告)日：2018-04-24

申请号：US15485049

申请日：2017-04-11

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Goran Mihajlovic ,  Ching Hwa Tsang

IPC: G11C11/00 ,  G11C11/16 ,  H01L43/08 ,  H01L43/10

CPC classification number: G11C11/1675 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10

Abstract: An in-plane SOT MRAM non-volatile memory cell has enhanced thermal stability due to coercive pinning provided by an adjacent antiferromagnetic layer that has a thickness that is less than a minimum critical thickness needed to provide exchange bias.