公开(公告)号：US20220139758A1

公开(公告)日：2022-05-05

申请号：US17090368

申请日：2020-11-05

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Makoto TSUTSUE ,  Shunsuke TAKUMA

IPC: H01L21/687 ,  C23C16/455 ,  H01L21/02 ,  H01L21/67

Abstract: A multi-wafer deposition tool includes a vacuum enclosure including a platen laterally surrounding multiple wafer stages, a spindle-blade assembly including a spindle and multiple transfer blades attached to the spindle, and a controller configured to transfer wafers between the multiple wafer stages through rotation of the multiple transfer blades around a rotation axis pasting through the spindle. A chamber clean process may be performed while the transfer blades of the spindle-blade assembly are positioned over the multiple wafer stages. Alternatively or additionally, a deposition cycle may be performed while the transfer blades of the spindle-blade assembly are positioned between neighboring pairs of the wafer stages and while a purge gas that flows out of purge gas openings into spaces between the wafer stages.

公开(公告)号：US20210388502A1

公开(公告)日：2021-12-16

申请号：US16897717

申请日：2020-06-10

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Seiji SHIMABUKURO ,  Makoto TSUTSUE

IPC: C23C16/56 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  C23C16/04 ,  C23C16/34 ,  H01J37/32

Abstract: A patterned backside stress compensation film having different stress in different sectors is formed on a backside of a substrate to reduce combination warpage of the substrate. The film can be formed by employing a radio frequency electrode assembly including plurality of conductive plates that are biased with different RF power and cause local variations in the plasma employed to deposit the backside film. Alternatively, the film may be deposited with uniform stress, and some of its sectors are irradiated with ultraviolet radiation to change the stress of these irradiated sectors. Yet alternatively, multiple backside deposition processes may be sequentially employed to deposit different backside films to provide a composite backside film having different stresses in different sectors.

公开(公告)号：US20210388500A1

公开(公告)日：2021-12-16

申请号：US16897679

申请日：2020-06-10

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Seiji SHIMABUKURO ,  Makoto TSUTSUE

IPC: C23C16/509 ,  H01J37/32 ,  H01L21/02 ,  H01L27/11556 ,  H01L21/67 ,  H01L27/11582 ,  H01L21/677 ,  C23C16/34

Abstract: A patterned backside stress compensation film having different stress in different sectors is formed on a backside of a substrate to reduce combination warpage of the substrate. The film can be formed by employing a radio frequency electrode assembly including plurality of conductive plates that are biased with different RF power and cause local variations in the plasma employed to deposit the backside film. Alternatively, the film may be deposited with uniform stress, and some of its sectors are irradiated with ultraviolet radiation to change the stress of these irradiated sectors. Yet alternatively, multiple backside deposition processes may be sequentially employed to deposit different backside films to provide a composite backside film having different stresses in different sectors.