公开(公告)号：US10748925B1

公开(公告)日：2020-08-18

申请号：US16268183

申请日：2019-02-05

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Masanori Tsutsumi ,  Manabu Kakazu ,  Raghuveer S. Makala ,  Senaka Kanakamedala

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11558 ,  H01L27/11529 ,  H01L27/11573 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11524

Abstract: A three-dimensional memory device includes a vertical semiconductor channel surrounding a vertical dielectric core. Laterally extending dielectric pegs structurally support the vertical semiconductor channel and the vertical dielectric core. The vertical semiconductor channel may be a single crystalline semiconductor channel.

公开(公告)号：US10964715B2

公开(公告)日：2021-03-30

申请号：US16268132

申请日：2019-02-05

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Manabu Kakazu ,  Takashi Yuda ,  Yuji Fukano

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L23/522 ,  H01L21/768 ,  H01L23/00 ,  H01L23/528 ,  H01L21/28

Abstract: A three-dimensional memory device includes a vertical semiconductor channel surrounding a vertical dielectric core. Laterally extending dielectric pegs structurally support the vertical semiconductor channel and the vertical dielectric core. The vertical semiconductor channel may be a single crystalline semiconductor channel.