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Patent Agency Ranking
公开(公告)号：US20180024880A1
公开(公告)日：2018-01-25
申请号：US15709769
申请日：2017-09-20
Applicant: SANDISK TECHNOLOGIES LLC
Inventor： Damian Yurzola , Eran Sharon , Idan Alrod , Michael Altshuler , Madhuri Kotagiri , Rajeev Nagabhirava
CPC classification number: G06F11/1068 , G06F11/1012 , G11C29/52
Abstract: In a flash memory, redundant columns are used alternatively as replacement columns for replacing bad columns or to provide additional redundancy for ECC encoding. Locations of bad columns are indicated to a soft-input ECC decoder so that data bits from bad columns are treated as having a lower reliability than data bits from other columns.
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2.发明申请公开(公告)号：US20170177231A1
公开(公告)日：2017-06-22
申请号：US15452119
申请日：2017-03-07
Applicant: SANDISK TECHNOLOGIES LLC
Inventor： Arjun Kapoor , Rajeev Nagabhirava , Dhaval Parikh
CPC classification number: G06F3/0604 , G06F1/3275 , G06F3/0619 , G06F3/0634 , G06F3/0653 , G06F3/0679 , G06F12/0246 , G06F2212/1016 , G06F2212/7203 , G06F2212/7205 , G11C5/14 , G11C16/225
Abstract: A memory device and techniques for its operation are presented. After operating on power received from a host, the memory device determines that it is no longer receiving host power and, in response, activates a power source on the memory device itself. Using this reserve power, the memory device can then perform data management operations. The techniques can also be applied to a digital appliance having a non-volatile memory. The memory device or digital appliance can prioritize its memory management operation during the host/user operating window based on the ability to perform these operations outside of the host/user operating window. Additionally, in a data write operations, where the memory device receives data from a host, stores the data in volatile memory, and then writes the data into the non-volatile memory, the memory device sends the host an acknowledgment of the data having been written into the non-volatile memory after it has been store in the volatile memory, but before the write into the non-volatile memory is complete.
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公开(公告)号：US10459787B2
公开(公告)日：2019-10-29
申请号：US15709769
申请日：2017-09-20
Applicant: SANDISK TECHNOLOGIES LLC
Inventor： Damian Yurzola , Eran Sharon , Idan Alrod , Michael Altshuler , Madhuri Kotagiri , Rajeev Nagabhirava
Abstract: In a flash memory, redundant columns are used alternatively as replacement columns for replacing bad columns or to provide additional redundancy for ECC encoding. Locations of bad columns are indicated to a soft-input ECC decoder so that data bits from bad columns are treated as having a lower reliability than data bits from other columns.
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公开(公告)号：US09792174B2
公开(公告)日：2017-10-17
申请号：US14841317
申请日：2015-08-31
Applicant: SanDisk Technologies LLC
Inventor： Damian Pablo Yurzola , Eran Sharon , Idan Alrod , Michael Altshuler , Madhuri Kotagiri , Rajeev Nagabhirava
CPC classification number: G06F11/1068 , G06F11/1012 , G11C29/52
Abstract: In a flash memory, redundant columns are used alternatively as replacement columns for replacing bad columns or to provide additional redundancy for ECC encoding. Locations of bad columns are indicated to a soft-input ECC decoder so that data bits from bad columns are treated as having a lower reliability than data bits from other columns.
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5.发明授权公开(公告)号：US09965186B2
公开(公告)日：2018-05-08
申请号：US15452119
申请日：2017-03-07
Applicant: SANDISK TECHNOLOGIES LLC
Inventor： Arjun Kapoor , Rajeev Nagabhirava , Dhaval Parikh
CPC classification number: G06F3/0604 , G06F1/3275 , G06F3/0619 , G06F3/0634 , G06F3/0653 , G06F3/0679 , G06F12/0246 , G06F2212/1016 , G06F2212/7203 , G06F2212/7205 , G11C5/14 , G11C16/225
Abstract: A memory device and techniques for its operation are presented. After operating on power received from a host, the memory device determines that it is no longer receiving host power and, in response, activates a power source on the memory device itself. Using this reserve power, the memory device can then perform data management operations. The techniques can also be applied to a digital appliance having a non-volatile memory. The memory device or digital appliance can prioritize its memory management operation during the host/user operating window based on the ability to perform these operations outside of the host/user operating window. Additionally, in a data write operations, where the memory device receives data from a host, stores the data in volatile memory, and then writes the data into the non-volatile memory, the memory device sends the host an acknowledgment of the data having been written into the non-volatile memory after it has been store in the volatile memory, but before the write into the non-volatile memory is complete.
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