公开(公告)号：US20240237344A1

公开(公告)日：2024-07-11

申请号：US18355745

申请日：2023-07-20

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Ramy Nashed Bassely SAID ,  Sarath PUTHENTHERMADAM ,  Jiahui YUAN ,  Raghuveer S. MAKALA ,  Longju LIU ,  Senaka KANAKAMEDALA

IPC: H10B43/27 ,  H10B43/35

CPC classification number: H10B43/27 ,  H10B43/35

Abstract: A memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening and containing a memory film and a vertical semiconductor channel; and a neighboring electrically conductive layer interference reduction feature provided for a first subset of the electrically conductive layers, such that a second subset of the electrically conductive layers lacks the neighboring electrically conductive layer interference reduction feature.