公开(公告)号：US12279445B2

公开(公告)日：2025-04-15

申请号：US17562635

申请日：2021-12-27

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Srinivas Pulugurtha ,  Yanli Zhang ,  Johann Alsmeier ,  Mitsuhiro Togo

IPC: H10D30/00 ,  H10D30/01 ,  H10D30/62 ,  H10D64/27

Abstract: A semiconductor structure includes a semiconductor substrate containing a shallow trench isolation structure that laterally surrounds a transistor active region, at least one line trench vertically extending into the semiconductor substrate, and a source region and a drain region located in the transistor active region. A contoured channel region continuously extends from the source region to the drain region underneath the at least one line trench. A gate dielectric contacts all surfaces of the at least one line trench and extends over an entirety of the contoured channel region. A gate electrode containing at least one fin portion overlies the gate dielectric.

公开(公告)号：US11805649B2

公开(公告)日：2023-10-31

申请号：US17385728

申请日：2021-07-26

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Srinivas Pulugurtha ,  Johann Alsmeier ,  Yanli Zhang ,  James Kai

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L21/762 ,  H01L29/10 ,  H01L21/3213 ,  H01L21/8234 ,  H01L21/308 ,  H01L21/311 ,  H10B43/27 ,  H10B41/27

CPC classification number: H10B43/27 ,  H01L21/308 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823418 ,  H01L29/1037 ,  H10B41/27

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through the alternating stack, memory opening fill structures located within a respective one of the memory openings, and at least one drain-select-level isolation structure vertically extending through at least a topmost electrically conductive layer among the electrically conductive layers. The at least one drain-select-level isolation structure may include wiggles and cut through upper portions of at least some of the memory opening fill structures, or may include a vertically-extending dielectric material portion and laterally-protruding dielectric material portions adjoined to the vertically-extending dielectric material portion and laterally protruding into lateral recesses located adjacent to the at least the topmost electrically conductive layer.