公开(公告)号：US20250040139A1

公开(公告)日：2025-01-30

申请号：US18794727

申请日：2024-08-05

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Fei ZHOU ,  Kartik SONDHI ,  Senaka KANAKAMEDALA ,  Wei CAO

IPC: H10B43/27 ,  G11C16/04 ,  H10B43/10 ,  H10B43/35

Abstract: A memory device includes a semiconductor source line layer containing silicon and electrical dopants, an alternating stack of insulating layers and electrically conductive layers located over the semiconductor source line layer, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening. The memory opening fill structure includes a memory film, a vertical semiconductor channel including silicon that is laterally surrounded by the memory film, and a silicon-germanium structure contacting an end portion of the vertical semiconductor channel and contacting the semiconductor source line.

公开(公告)号：US20240268115A1

公开(公告)日：2024-08-08

申请号：US18357702

申请日：2023-07-24

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Wei CAO ,  Xiang YANG ,  Koichi MATSUNO

IPC: H10B43/27 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18 ,  H10B43/35 ,  H10B80/00

CPC classification number: H10B43/27 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H10B43/35 ,  H10B80/00 ,  H01L2224/08145 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening and including a memory film and a vertical semiconductor channel including a first semiconductor material, and source structure including an interfacial source layer and a primary source layer. The interfacial source layer includes a second semiconductor material that has a different band gap from a band gap of the first semiconductor material and is in contact with an end portion of the vertical semiconductor channel. The primary source layer includes a third semiconductor material that has a different band gap from the band gap of the second semiconductor material, and the primary source layer is in contact with the interfacial source layer.