公开(公告)号：US20220278216A1

公开(公告)日：2022-09-01

申请号：US17189153

申请日：2021-03-01

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Xue Bai PITNER ,  Raghuveer S. MAKALA ,  Fei ZHOU ,  Senaka KANAKAMEDALA ,  Ramy Nashed Bassely SAID

IPC: H01L29/423 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/11597 ,  H01L29/78 ,  H01L21/28

Abstract: A memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and memory opening fill structures located in the memory opening and including a vertical semiconductor channel, a dielectric material liner laterally surrounding the vertical semiconductor channel, and a vertical stack of discrete memory elements laterally surrounding the dielectric material liner. A subset of the insulating layers a lower insulating sublayer, an upper insulating sublayer overlying the lower insulating sublayer, and a center insulating sublayer located between and in contact with the lower insulating sublayer and the upper insulating sublayer.