公开(公告)号：US20230121666A1

公开(公告)日：2023-04-20

申请号：US17788142

申请日：2020-12-24

申请人： SCREEN HOLDINGS CO., LTD.

发明人： Tomohiro TAKAHASHI ,  Takuya KISHIDA ,  Masayuki ORISAKA ,  Kei TAKECHI

IPC分类号： H01L21/67 ,  H01L21/306

摘要： At least part of a processing liquid upward flowing in a storage space is split into a plurality of upflows and guided to a substrate held by a substrate holder. Many upflows are widely dispersed and formed in the processing liquid stored in the storage space, and the generation of downflows in the storage space is suppressed. As a result, bubbles are uniformly supplied to the substrate and substrate processing can be performed in high quality.

公开(公告)号：US20230101475A1

公开(公告)日：2023-03-30

申请号：US17947747

申请日：2022-09-19

申请人： SCREEN Holdings Co., Ltd.

发明人： Takashi IZUTA ,  Hiroki TAJIRI ,  Masayuki ORISAKA

IPC分类号： B05D1/18 ,  B05C3/04 ,  B05C11/10

摘要： A substrate processing method is executed by a substrate processing apparatus. The substrate processing apparatus includes a processing tank, and a bubble supply pipe disposed in the processing tank. In the substrate processing method, a substrate holding section immerses a substrate in an alkaline processing liquid stored in the processing tank. A bubble supply section supplies bubbles to the alkaline processing liquid from below the substrate with the substrate immersed in the alkaline processing liquid, the bubbles being supplied from a plurality of bubble holes provided in the bubble supply pipe.

公开(公告)号：US20220208563A1

公开(公告)日：2022-06-30

申请号：US17550076

申请日：2021-12-14

申请人： SCREEN Holdings Co., Ltd.

发明人： Sei NEGORO ,  Masayuki ORISAKA

IPC分类号： H01L21/67

摘要： A substrate processing apparatus includes a spin chuck that holds a substrate, and a fluid nozzle disposed to face a principal surface of the substrate which is held by the spin chuck. The fluid nozzle includes a gas discharge port from which a gas is discharged radially from the center side of the principal surface of the substrate to the peripheral edge side, and a gas flow passage through which the gas is supplied to the gas discharge port, the gas flow passage having a tubular shape along an intersecting direction with respect to the principal surface of the substrate. The gas flow passage has a gas retaining portion whose flow passage cross-sectional area is larger than other portions of the gas flow passage, and a rectifying structure provided in a portion of the gas flow passage different from the gas retaining portion, the rectifying structure that rectifies a flow of the gas in the gas flow passage.

公开(公告)号：US20230074202A1

公开(公告)日：2023-03-09

申请号：US17802135

申请日：2021-01-13

申请人： SCREEN Holdings Co., Ltd.

发明人： Yuji YAMAGUCHI ,  Masayuki ORISAKA ,  Saki MIYAGAWA

IPC分类号： H01L21/02 ,  H01L21/67

摘要： A substrate processing apparatus according to the invention executes a substrate processing using a supercritical processing fluid. In a processing container, a first introduction port is formed in such a manner as to face space over a substrate in the processing space and a second introduction port is formed in such a manner as to face space under a support tray in the processing space. A first discharge port is formed in such a manner as to face space over the support tray and a second discharge port is formed in such a manner as to face the space under the support tray. The supercritical processing fluid having a higher temperature is supplied into the processing space through the first introduction port, and the supercritical processing fluid having a lower temperature is supplied into the processing space through the second introduction port.

公开(公告)号：US20210313199A1

公开(公告)日：2021-10-07

申请号：US17219933

申请日：2021-04-01

申请人： SCREEN Holdings Co., Ltd.

发明人： Noritake SUMI ,  Masayuki ORISAKA

IPC分类号： H01L21/67 ,  B08B7/00

摘要： A processing fluid flows into a processing space SP by way of a flow passage and discharge openings 174, 178 having substantially the same cross-sectional shape as that of a gap space formed in a clearance between a wall surface of the processing space SP and a substrate holder 15. On the other hand, the processing fluid having passed through the processing space SP is discharged to an outside via discharge flow passages 183, 187 after flowing into the buffer space 182, 186 having substantially the same width as the gap space. From these, the processing fluid can be caused to flow into the buffer space 182, 186 while the laminar flow state is maintained in the gap space. Thus, the generation of a turbulence in the processing space SP can be suppressed.