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1.发明申请公开(公告)号：US20190091640A1
公开(公告)日：2019-03-28
申请号：US16114253
申请日：2018-08-28
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Hajime NISHIDE , Takashi IZUTA , Takatoshi HAYASHI , Katsuhiro FUKUI , Koichi OKAMOTO , Kazuhiro FUJITA , Atsuyasu MIURA , Kenji KOBAYASHI , Sei NEGORO , Hiroki TSUJIKAWA
Abstract: A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.
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公开(公告)号：US20240100573A1
公开(公告)日：2024-03-28
申请号：US18469260
申请日：2023-09-18
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Mitsutoshi SASAKI , Takashi IZUTA , Manabu YAMAMOTO
IPC: B08B3/04
CPC classification number: B08B3/04
Abstract: A substrate processing apparatus includes a processing tank, a substrate holding section, a bubble supply section, and processing liquid supply sections. The substrate holding section immerses a substrate in a processing liquid stored in the processing tank. The bubble supply section supplies bubbles to the processing liquid from below the substrate. The processing tank includes a first side wall and a second side wall. The processing liquid supply sections include one or more first processing liquid supply sections and one or more second processing liquid supply sections. The one or more first processing liquid supply sections are disposed on a side of the first side wall and supply the processing liquid toward the bubbles. The one or more second processing liquid supply sections are disposed on a side of the second side wall and supply the processing liquid toward the bubbles.
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Patent Agency Ranking
公开(公告)号：US20250062115A1
公开(公告)日：2025-02-20
申请号：US18802919
申请日：2024-08-13
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Takashi IZUTA
Abstract: A substrate processing method includes a first chemical liquid step of supplying a first chemical liquid to the substrate, a rinsing step of supplying a rinse liquid to the substrate, a removal step of rotating the substrate in a state in which the supply of the rinse liquid is stopped, and discharging the rinse liquid from a recess portion, and removing the rinse liquid from the substrate, and a second chemical liquid step of supplying a second chemical liquid to the substrate from which the rinse liquid has been removed. In the first chemical liquid step, the first chemical liquid discharged from the rotating substrate is received by a first guard. In the rinsing step, the first guard is switched to a second guard. In the removal step and in the second chemical liquid step, the first rinse liquid and the second chemical liquid discharged from the rotating substrate are received by the second guard.
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公开(公告)号：US20240096673A1
公开(公告)日：2024-03-21
申请号：US18470160
申请日：2023-09-19
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Takashi IZUTA
IPC: H01L21/677 , H01L21/67 , H01L21/687
CPC classification number: H01L21/67712 , H01L21/67259 , H01L21/68742
Abstract: Provided is a substrate treating apparatus can be provided that transports substrates reliably and has suppressed manufacturing cost by revising a construction of an apparatus including a batch-type module and a single-wafer-type module.
The present invention especially focuses on a process by a substrate treating apparatus for picking up one substrate from substrates aligned in a vertical posture, turning a posture of the substrate to horizontal, and transporting the substrate to a predetermined position in the vicinity of a single-wafer transport region. With the present invention, a process of picking up the substrate and a process of turning the posture of the substrate are performed independently, achieving simplification in construction of a substrate pick-up unit and reduction in positional error generated when the substrate pick-up unit operates.-
公开(公告)号：US20240342672A1
公开(公告)日：2024-10-17
申请号：US18755680
申请日：2024-06-27
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Hajime NISHIDE , Takashi IZUTA , Takatoshi HAYASHI , Katsuhiro FUKUI , Koichi OKAMOTO , Kazuhiro FUJITA , Atsuyasu MIURA , Kenji KOBAYASHI , Sei NEGORO , Hiroki TSUJIKAWA
IPC: B01F35/82 , B01F23/231 , B01F23/237 , B01F35/21 , B01F35/22 , G05D11/00 , G05D21/02 , H01L21/306 , H01L21/3213 , H01L21/67 , B01F101/58
CPC classification number: B01F35/82 , B01F23/231 , B01F23/237611 , B01F23/237612 , B01F23/23765 , B01F35/2132 , B01F35/2202 , G05D11/00 , G05D21/02 , H01L21/30608 , H01L21/32134 , H01L21/67017 , H01L21/67028 , H01L21/67051 , H01L21/67075 , H01L21/6708 , B01F2101/58
Abstract: A chemical liquid preparation method of preparing a TMAH-containing chemical liquid, including, a correspondence relationship preparing step of preparing a correspondence relationship between a supply flow rate ratio between an oxygen-containing gas and an inert-gas-containing gas and a convergent dissolved oxygen concentration in the TMAH-containing chemical liquid that is converged to when the oxygen-containing gas and the inert-gas-containing gas are supplied into the TMAH-containing chemical liquid; a concentration setting step of setting a target dissolved oxygen concentration in the TMAH-containing chemical liquid; a supply-flow-rate-ratio acquiring step of acquiring the supply flow rate ratio between the oxygen-containing gas and the inert-gas-containing gas corresponding to the target dissolved oxygen concentration in accordance with the correspondence relationship prepared in the correspondence relationship preparing step; and a gas supplying step of supplying the oxygen-containing gas and the inert-gas-containing gas with the supply flow rate ratio acquired in the supply-flow-rate-ratio acquiring step.
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公开(公告)号：US20230101475A1
公开(公告)日：2023-03-30
申请号：US17947747
申请日：2022-09-19
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Takashi IZUTA , Hiroki TAJIRI , Masayuki ORISAKA
Abstract: A substrate processing method is executed by a substrate processing apparatus. The substrate processing apparatus includes a processing tank, and a bubble supply pipe disposed in the processing tank. In the substrate processing method, a substrate holding section immerses a substrate in an alkaline processing liquid stored in the processing tank. A bubble supply section supplies bubbles to the alkaline processing liquid from below the substrate with the substrate immersed in the alkaline processing liquid, the bubbles being supplied from a plurality of bubble holes provided in the bubble supply pipe.
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公开(公告)号：US20220347641A1
公开(公告)日：2022-11-03
申请号：US17867693
申请日：2022-07-19
Applicant: SCREEN Holdings Co., Ltd.
Inventor： Hajime NISHIDE , Takashi IZUTA , Takatoshi HAYASHI , Katsuhiro FUKUI , Koichi OKAMOTO , Kazuhiro FUJITA , Atsuyasu MIURA , Kenji KOBAYASHI , Sei NEGORO , Hiroki TSUJIKAWA
IPC: B01F35/82 , H01L21/67 , G05D21/02 , H01L21/306 , G05D11/00 , H01L21/3213 , B01F23/231 , B01F35/21 , B01F35/22
Abstract: A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.
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