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公开(公告)号:US09269381B1
公开(公告)日:2016-02-23
申请号:US14486827
申请日:2014-09-15
Applicant: Seagate Technology LLC
Inventor: Victor Boris Sapozhnikov , Kevin McNeill
IPC: G11B5/39
CPC classification number: G11B5/3912 , G11B5/3932 , G11B5/398
Abstract: A reader sensor having a composite shield and a sensor stack. The composite shield includes a high magnetic moment layer having a magnetic moment greater than 1.0 T, a low magnetic moment layer, and a spacer therebetween. The high magnetic moment layer is closer to the stack than the low magnetic moment layer. The high magnetic moment layer may be a single layer or have a plurality of layers.
Abstract translation: 具有复合屏蔽和传感器叠层的读取器传感器。 复合屏蔽包括具有大于1.0T的磁矩的高磁矩层,低磁矩层以及间隔件。 高磁矩层比低磁矩层更靠近堆叠。 高磁矩层可以是单层或多层。
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公开(公告)号:US08988832B2
公开(公告)日:2015-03-24
申请号:US13953936
申请日:2013-07-30
Applicant: Seagate Technology LLC
Inventor: Kevin McNeill , Aidan Goggin , Marcus Ormston , Victor Boris Sapozhnikov
CPC classification number: G11B5/11 , G11B5/3929 , G11B5/398 , H01L43/02 , H01L43/08 , Y10T428/1193
Abstract: Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for a region of reduced anisotropy within a synthetic antiferromagnetic (SAF) shield. The SAF shield includes first and second layers of ferromagnetic material separated by a coupling spacer layer. A distance between the first and second layers of ferromagnetic material is greater in a region proximal to the sensor stack than in a region away from the sensor stack.
Abstract translation: 通过在合成的反铁磁(SAF)屏蔽内提供减小各向异性的区域,可以改善由磁阻(MR)传感器检测到的信号。 SAF屏蔽包括由耦合间隔层隔开的第一和第二层铁磁材料层。 铁氧体材料的第一和第二层之间的距离在靠近传感器堆叠的区域中大于远离传感器堆叠的区域。
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公开(公告)号:US08922952B2
公开(公告)日:2014-12-30
申请号:US13835952
申请日:2013-03-15
Applicant: Seagate Technology LLC
Inventor: Peter McGeehin , Aidan Goggin , Kevin McNeill , Marcus Ormston
IPC: G11B5/39
CPC classification number: G11B5/3912 , G11B5/398 , H01L43/08
Abstract: A data sensor may be configured in accordance with some embodiments to have a magnetically responsive stack that contacts at least one shield. The at least one shield may be constructed with a non-rectangular shaped electrical contact, such as a triangular and trapezoidal shape, respectively positioned on top and bottom shields on opposite sides of the magnetically responsive stack.
Abstract translation: 可以根据一些实施例来配置数据传感器以具有接触至少一个屏蔽的磁响应堆叠。 所述至少一个屏蔽件可以被构造成具有非矩形形状的电触点,例如三角形和梯形形状,分别位于磁性响应堆叠的相对侧上的顶部和底部屏蔽上。
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公开(公告)号:US10008223B1
公开(公告)日:2018-06-26
申请号:US15435561
申请日:2017-02-17
Applicant: Seagate Technology LLC
Inventor: Alexey Dobrynin , Zhiran Wang , Kevin McNeill , Denis O'Donnell , Sameh Hassan , Marcus Ormston , Robert William Lamberton
IPC: G11B5/39
CPC classification number: G11B5/3906 , G11B5/3909 , G11B5/3932 , G11B5/398 , G11B2005/3996
Abstract: A read sensor having a bearing surface and an antiferromagnetic (AFM) layer recessed from the bearing surface. The read sensor includes a synthetic antiferromagnetic (SAF) structure over the AFM layer. The SAF structure includes a recessed lower pinned layer, an upper pinned layer, a reference layer and a stabilization feature. The stabilization feature may include deliberate reduction of the antiferromagnetic coupling energy density between the upper pinned layer and the reference layer, so that it becomes lower than the first energy density of antiferromagnetic coupling between the upper pinned layer and the lower pinned layer. The stabilization feature may alternatively include an intermediate pinned layer between the lower pinned layer and the upper pinned layer. The intermediate pinned layer is antiferromagnetically coupled to both the lower pinned layer and the upper pinned layer, and at least a portion of the intermediate pinned layer is recessed behind the bearing surface.
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公开(公告)号:US20140268429A1
公开(公告)日:2014-09-18
申请号:US13835952
申请日:2013-03-15
Applicant: SEAGATE TECHNOLOGY LLC
Inventor: Peter McGeehin , Aidan Goggin , Kevin McNeill , Marcus Ormston
IPC: G11B5/39
CPC classification number: G11B5/3912 , G11B5/398 , H01L43/08
Abstract: A data sensor may be configured in accordance with some embodiments to have a magnetically responsive stack that contacts at least one shield. The at least one shield may be constructed with a non-rectangular shaped electrical contact, such as a triangular and trapezoidal shape, respectively positioned on top and bottom shields on opposite sides of the magnetically responsive stack.
Abstract translation: 可以根据一些实施例来配置数据传感器以具有接触至少一个屏蔽的磁响应堆叠。 所述至少一个屏蔽件可以被构造成具有非矩形形状的电触点,例如三角形和梯形形状,分别位于磁性响应堆叠的相对侧上的顶部和底部屏蔽上。
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公开(公告)号:US09870790B1
公开(公告)日:2018-01-16
申请号:US15157579
申请日:2016-05-18
Applicant: Seagate Technology LLC
Inventor: Sameh Hassan , Yuqing Du , Marcus Ormston , Denis O'Donnell , Kevin McNeill
CPC classification number: G11B5/3912 , G11B5/3163 , G11B5/3929
Abstract: A read sensor and fabrication method thereof. The method includes forming a bottom stack that includes an antiferromagnetic (AFM) layer, a lower ferromagnetic stitch layer above the AFM layer and a sacrificial cap layer on the lower ferromagnetic stitch layer. The sacrificial cap layer is formed of a material that alloys magnetically with the lower ferromagnetic stitch layer. The method further includes substantially removing the sacrificial cap layer. After substantially removing the sacrificial layer, an upper ferromagnetic stitch layer is deposited on the lower ferromagnetic stitch layer of the bottom stack to form a stitch interface that provides relatively strong magnetic coupling between the lower ferromagnetic stitch layer of the bottom stack and the upper ferromagnetic stitch layer.
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公开(公告)号:US20160155458A1
公开(公告)日:2016-06-02
申请号:US15018365
申请日:2016-02-08
Applicant: Seagate Technology LLC
Inventor: Victor Boris Sapozhnikov , Kevin McNeill
IPC: G11B5/39
CPC classification number: G11B5/3912 , G11B5/3932 , G11B5/398
Abstract: A reader sensor having a composite shield and a sensor stack. The composite shield includes a high magnetic moment layer having a magnetic moment greater than 1.0 T, a low magnetic moment layer, and a spacer therebetween. The high magnetic moment layer is closer to the stack than the low magnetic moment layer. The high magnetic moment layer may be a single layer or have a plurality of layers.
Abstract translation: 具有复合屏蔽和传感器叠层的读取器传感器。 复合屏蔽包括具有大于1.0T的磁矩的高磁矩层,低磁矩层以及间隔件。 高磁矩层比低磁矩层更靠近堆叠。 高磁矩层可以是单层或多层。
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公开(公告)号:US20160078889A1
公开(公告)日:2016-03-17
申请号:US14486827
申请日:2014-09-15
Applicant: Seagate Technology LLC
Inventor: Victor Boris Sapozhnikov , Kevin McNeill
IPC: G11B5/39
CPC classification number: G11B5/3912 , G11B5/3932 , G11B5/398
Abstract: A reader sensor having a composite shield and a sensor stack. The composite shield includes a high magnetic moment layer having a magnetic moment greater than 1.0 T, a low magnetic moment layer, and a spacer therebetween. The high magnetic moment layer is closer to the stack than the low magnetic moment layer. The high magnetic moment layer may be a single layer or have a plurality of layers.
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公开(公告)号:US09047884B2
公开(公告)日:2015-06-02
申请号:US13960394
申请日:2013-08-06
Applicant: Seagate Technology LLC
Inventor: Kevin McNeill , Peter McGeehin , Marcus Ormston , Aidan Goggin
CPC classification number: G11B5/11 , G11B5/3912 , G11B5/398
Abstract: A data storage device may be constructed to sense data bits with at least a magnetic stack contacting a shield that has a horizontal lamination of magnetic and non-magnetic layers. The magnetic layer may be configured with a first width at an air bearing surface (ABS) that defines a first aspect ratio and a different second width that defines a different second aspect ratio distal the ABS.
Abstract translation: 数据存储装置可以被构造成用至少一个磁性堆栈接触具有磁性和非磁性层的水平叠层的屏蔽来感测数据位。 磁性层可以在限定第一长宽比的空气轴承表面(ABS)处构造为具有第一宽度,并且在远离ABS的位置限定不同的第二纵横比。
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公开(公告)号:US09343091B1
公开(公告)日:2016-05-17
申请号:US15018365
申请日:2016-02-08
Applicant: Seagate Technology LLC
Inventor: Victor Boris Sapozhnikov , Kevin McNeill
IPC: G11B5/39
CPC classification number: G11B5/3912 , G11B5/3932 , G11B5/398
Abstract: A reader sensor having a composite shield and a sensor stack. The composite shield includes a high magnetic moment layer having a magnetic moment greater than 1.0 T, a low magnetic moment layer, and a spacer therebetween. The high magnetic moment layer is closer to the stack than the low magnetic moment layer. The high magnetic moment layer may be a single layer or have a plurality of layers.
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