公开(公告)号：US20160133440A1

公开(公告)日：2016-05-12

申请号：US14938026

申请日：2015-11-11

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Sridhar Dubbaka ,  Sriram Viswanathan ,  Christina Hutchinson

IPC: H01J37/32

CPC classification number: H01J37/32009 ,  G11B5/3116 ,  G11B5/3163 ,  G11B2005/0021 ,  H01J2237/332 ,  H01J2237/334

Abstract: A method of forming a feature in a void, the method including filling the void having at least one sloped wall with a polymeric material; forming a layer of photoresist over the polymeric material; forming a gap in the layer of photoresist; and etching the polymeric material exposed by the gap in the layer of photoresist to form a feature.

Abstract translation: 一种在空隙中形成特征的方法，所述方法包括用聚合材料填充具有至少一个倾斜壁的空隙; 在聚合物材料上形成一层光致抗蚀剂; 在光致抗蚀剂层中形成间隙; 并蚀刻由光致抗蚀剂层中的间隙暴露的聚合物材料以形成特征。

公开(公告)号：US20180114674A1

公开(公告)日：2018-04-26

申请号：US15707346

申请日：2017-09-18

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Sridhar Dubbaka ,  Sriram Viswanathan ,  Christina Hutchinson

IPC: H01J37/32 ,  G11B5/31 ,  G11B5/00

CPC classification number: H01J37/32009 ,  G11B5/3116 ,  G11B5/3163 ,  G11B2005/0021 ,  H01J2237/332 ,  H01J2237/334

Abstract: A method of forming a feature in a void, the method including filling the void having at least one sloped wall with a polymeric material; forming a layer of photoresist over the polymeric material; forming a gap in the layer of photoresist; and etching the polymeric material exposed by the gap in the layer of photoresist to form a feature.

公开(公告)号：US09767989B2

公开(公告)日：2017-09-19

申请号：US14938026

申请日：2015-11-11

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Sridhar Dubbaka ,  Sriram Viswanathan ,  Christina Hutchinson

IPC: H01L21/312 ,  B44C1/22 ,  H01J37/32 ,  G11B5/31 ,  G11B5/00

CPC classification number: H01J37/32009 ,  G11B5/3116 ,  G11B5/3163 ,  G11B2005/0021 ,  H01J2237/332 ,  H01J2237/334

Abstract: A method of forming a feature in a void, the method including filling the void having at least one sloped wall with a polymeric material; forming a layer of photoresist over the polymeric material; forming a gap in the layer of photoresist; and etching the polymeric material exposed by the gap in the layer of photoresist to form a feature.

公开(公告)号：US10361068B2

公开(公告)日：2019-07-23

申请号：US15707346

申请日：2017-09-18

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Sridhar Dubbaka ,  Sriram Viswanathan ,  Christina Hutchinson

IPC: H01L21/312 ,  B44C1/22 ,  G11B5/31 ,  H01J37/32 ,  G11B5/00

Abstract: A method of forming a feature in a void, the method including filling the void having at least one sloped wall with a polymeric material; forming a layer of photoresist over the polymeric material; forming a gap in the layer of photoresist; and etching the polymeric material exposed by the gap in the layer of photoresist to form a feature.