TUNNELING MAGNETO-RESISTIVE SENSORS WITH BUFFER LAYERS
    1.
    发明申请
    TUNNELING MAGNETO-RESISTIVE SENSORS WITH BUFFER LAYERS 有权
    具有缓冲层的隧道式电磁感应传感器

    公开(公告)号:US20150097255A1

    公开(公告)日:2015-04-09

    申请号:US14568645

    申请日:2014-12-12

    Abstract: In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy.In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.

    Abstract translation: 在某些实施例中,隧道磁阻(TMR)传感器包括位于种子层和覆盖层之间的传感器堆叠。 种子层包括包含非磁性镍合金的第一缓冲层。 在某些实施例中,传感器堆叠包括顶部和底部屏蔽以及邻近底部屏蔽定位的种子层。 种子层具有包括镍合金的第一缓冲层。

    Tunneling magneto-resistive sensors with buffer layers
    2.
    发明授权
    Tunneling magneto-resistive sensors with buffer layers 有权
    隧道磁阻传感器与缓冲层

    公开(公告)号:US09082958B2

    公开(公告)日:2015-07-14

    申请号:US14568645

    申请日:2014-12-12

    Abstract: In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy. In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.

    Abstract translation: 在某些实施例中,隧道磁阻(TMR)传感器包括位于种子层和覆盖层之间的传感器堆叠。 种子层包括包含非磁性镍合金的第一缓冲层。 在某些实施例中,传感器堆叠包括顶部和底部屏蔽以及邻近底部屏蔽定位的种子层。 种子层具有包括镍合金的第一缓冲层。

Patent Agency Ranking