TUNNELING MAGNETO-RESISTIVE SENSORS WITH BUFFER LAYERS
    4.
    发明申请
    TUNNELING MAGNETO-RESISTIVE SENSORS WITH BUFFER LAYERS 有权
    具有缓冲层的隧道式电磁感应传感器

    公开(公告)号:US20150097255A1

    公开(公告)日:2015-04-09

    申请号:US14568645

    申请日:2014-12-12

    IPC分类号: H01L43/08 H01L43/02

    摘要: In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy.In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.

    摘要翻译: 在某些实施例中,隧道磁阻(TMR)传感器包括位于种子层和覆盖层之间的传感器堆叠。 种子层包括包含非磁性镍合金的第一缓冲层。 在某些实施例中,传感器堆叠包括顶部和底部屏蔽以及邻近底部屏蔽定位的种子层。 种子层具有包括镍合金的第一缓冲层。

    MAGNETIC SENSING DEVICE WITH REDUCED SHIELD-TO-SHIELD SPACING
    6.
    发明申请
    MAGNETIC SENSING DEVICE WITH REDUCED SHIELD-TO-SHIELD SPACING 审中-公开
    具有减小的屏蔽到屏蔽间隔的磁感测装置

    公开(公告)号:US20160356861A1

    公开(公告)日:2016-12-08

    申请号:US15238354

    申请日:2016-08-16

    IPC分类号: G01R33/00 G01R33/09

    摘要: A magnetic sensor assembly includes first and second shields each comprised of a magnetic material. The first and second shields define a physical shield-to-shield spacing. A sensor stack is disposed between the first and second shields and includes a seed layer adjacent the first shield, a cap :layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer. At least a portion of the seed layer and/or the cap layer comprises a magnetic material to provide an effective shield-to-shield spacing of the magnetic sensor assembly that is less than the physical shield-to-shield spacing.

    摘要翻译: 磁传感器组件包括由磁性材料构成的第一和第二屏蔽件。 第一和第二屏蔽层定义物理屏蔽间隔。 传感器堆叠设置在第一和第二屏蔽之间,并且包括邻近第一屏蔽的种子层,与第二屏蔽相邻的盖:层和种子层与盖层之间的磁传感器。 种子层和/或盖层的至少一部分包括磁性材料,以提供小于物理屏蔽 - 屏蔽间隔的磁性传感器组件的有效的屏蔽到屏蔽间隔。

    Tuned horizontally symmetric magnetic stack
    9.
    发明授权
    Tuned horizontally symmetric magnetic stack 有权
    调整水平对称磁栈

    公开(公告)号:US09218826B1

    公开(公告)日:2015-12-22

    申请号:US13968539

    申请日:2013-08-16

    IPC分类号: G11B5/39 G11B5/147

    摘要: A data storage device may be constructed as a data reader in various embodiments with a magnetic stack that has a barrier layer disposed between first and second magnetically free layers. The magnetic stack may have a horizontally symmetrical configuration that provides negative exchange coupling between the magnetically free layers.

    摘要翻译: 在各种实施例中,数据存储设备可以被构造为数据读取器,其中磁堆栈具有设置在第一和第二无磁层之间的阻挡层。 磁性堆叠可以具有水平对称的构造,其在无磁层之间提供负的交换耦合。

    Tunneling magneto-resistive sensors with buffer layers
    10.
    发明授权
    Tunneling magneto-resistive sensors with buffer layers 有权
    隧道磁阻传感器与缓冲层

    公开(公告)号:US09082958B2

    公开(公告)日:2015-07-14

    申请号:US14568645

    申请日:2014-12-12

    IPC分类号: G11B5/39 H01L43/08 H01L43/02

    摘要: In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy. In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.

    摘要翻译: 在某些实施例中,隧道磁阻(TMR)传感器包括位于种子层和覆盖层之间的传感器堆叠。 种子层包括包含非磁性镍合金的第一缓冲层。 在某些实施例中,传感器堆叠包括顶部和底部屏蔽以及邻近底部屏蔽定位的种子层。 种子层具有包括镍合金的第一缓冲层。