公开(公告)号：US20230369074A1

公开(公告)日：2023-11-16

申请号：US18105796

申请日：2023-02-03

Applicant: SEMES CO., LTD.

Inventor： Hae Won CHOI ,  Hong Chan CHO ,  Eun Mi KIM

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67034 ,  H01L21/02101

Abstract: Provided is an apparatus for supplying gas in a facility for processing a substrate, the apparatus for supplying gas in a facility for processing a substrate including: a gas supply line connecting a gas storage unit and a process chamber for processing a substrate; and a flow control unit installed in the gas supply line, and controlling a gas flow rate of drying gas supplied through the gas supply line with a metering valve and a mass flow controller (MFC) disposed in parallel.