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公开(公告)号：US20240186135A1
公开(公告)日：2024-06-06
申请号：US18497425
申请日：2023-10-30
Applicant: SEMES CO., LTD.
Inventor： Hae Won CHOI , Thomas Jongwan KWON , Chengyeh HSU
CPC classification number: H01L21/02101 , H01L21/67028
Abstract: A substrate processing method using a supercritical fluid is provided that can deposit a conformal film in a trench with a high aspect ratio and allows complete filling without voids. The substrate processing method comprises performing a supercritical process by repeating a first step, a first vent step, a second step, and a second vent step a plurality of times in order, supplying, in the first step, a first process fluid containing a precursor and a first supercritical fluid to a reactor so that a pressure of the reactor repeats rise and fall within a first pressure range a plurality of times, venting, in the first vent step, the reactor to lower the pressure of the reactor below the first pressure range, supplying, in the second step, a second process fluid containing a reducing fluid to the reactor so that the pressure of the reactor repeats rise and fall within a second pressure range different from the first pressure range a plurality of times, venting, in the second vent step, the reactor to lower the pressure of the reactor below the second pressure range.
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公开(公告)号：US20240183037A1
公开(公告)日：2024-06-06
申请号：US18494979
申请日：2023-10-26
Applicant: SEMES CO., LTD.
Inventor： Hae Won CHOI , Thomas Jongwan KWON , Chengyeh HSU
CPC classification number: C23C18/1603 , C23C18/1658 , C23C18/1685 , C23C18/18
Abstract: A substrate processing method using a supercritical fluid is provided that can deposit a conformal film in a trench with a high aspect ratio and allows complete filling without voids. The substrate processing method comprises supplying a first process fluid containing a precursor and a first supercritical fluid to a reactor to raise a pressure of the reactor to a first pressure equal to or greater than a critical pressure, subsequently, first venting the reactor to lower the pressure in the reactor to a second pressure, subsequently, supplying a second process fluid containing a reducing fluid to the reactor to raise the pressure in the reactor to a third pressure, subsequently, second venting the reactor to lower the pressure in the reactor to a fourth pressure.
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公开(公告)号：US20240179885A1
公开(公告)日：2024-05-30
申请号：US18495266
申请日：2023-10-26
Applicant: SEMES CO., LTD.
Inventor： Thomas Jongwan KWON , Hae Won CHOI , Yun Sang KIM , Chengyeh HSU
IPC: H10B12/00
CPC classification number: H10B12/053 , H10B12/09 , H10B12/34
Abstract: A method of fabricating a semiconductor device, which is capable of sufficiently filling trenches, is provided. The method includes: providing a substrate having defined thereon a plurality of active regions, which are spaced apart from one another by a device isolation film; forming a plurality of wordline trenches, which extend longitudinally in one direction, by removing portions of the active regions and portions of the device isolation film; forming gate insulating films along inner sidewalls of the wordline trenches; and forming wordlines, which fill portions of the wordline trenches, on the gate insulating films, wherein the forming the wordlines, comprises filling the portions of the wordline trenches with metal layers using a supercritical fluid deposition (SFD) method.
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公开(公告)号：US20240183030A1
公开(公告)日：2024-06-06
申请号：US18492149
申请日：2023-10-23
Applicant: SEMES CO., LTD.
Inventor： Hae Won CHOI , Thomas Jongwan KWON , Chengyeh HSU
CPC classification number: C23C16/045 , C23C16/06
Abstract: Provided is a substrate treatment apparatus using a supercritical fluid, the apparatus capable of depositing a conformal film in a trench with a high aspect ratio and capable of performing void-free complete gap-filling. The substrate treatment apparatus includes: an upper vessel including a first body and a supply port formed in the first body and supplying a process fluid; a baffle plate installed in the upper vessel and supplying the process fluid supplied through the supply port to a treatment space by diffusing the process fluid; a lower vessel including a second body and an exhaust port formed in the second body and exhausting the process fluid from the treatment space; and a support plate installed in the lower vessel to face the baffle plate and supporting a substrate, wherein while a supercritical process is performed in the treatment space, the support plate is heated so that the temperature of the support plate is higher than that of the first body.
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Patent Agency Ranking
公开(公告)号：US20230369074A1
公开(公告)日：2023-11-16
申请号：US18105796
申请日：2023-02-03
Applicant: SEMES CO., LTD.
Inventor： Hae Won CHOI , Hong Chan CHO , Eun Mi KIM
CPC classification number: H01L21/67034 , H01L21/02101
Abstract: Provided is an apparatus for supplying gas in a facility for processing a substrate, the apparatus for supplying gas in a facility for processing a substrate including: a gas supply line connecting a gas storage unit and a process chamber for processing a substrate; and a flow control unit installed in the gas supply line, and controlling a gas flow rate of drying gas supplied through the gas supply line with a metering valve and a mass flow controller (MFC) disposed in parallel.
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公开(公告)号：US20230350304A1
公开(公告)日：2023-11-02
申请号：US17732565
申请日：2022-04-29
Applicant: SEMES CO, LTD.
Inventor： Hae Won CHOI , Joon Ho WON , Koriakin ANTON , Ki Hoon CHOI , Eung Su KIM , Pil Kyun HEO , Min Woo KIM , Jin Yeong SUNG , Hyo Soo KIM
CPC classification number: G03F7/3021 , G03F7/327
Abstract: There are provided an apparatus and a method for providing a substrate, which can suppress any additional reaction between a developing solution and a photoresist (PR) film and prevent any PR remnants from being generated from such additional reaction. The method includes: supplying an organic developing solution onto a substrate while rotating the substrate at a first revolutions per minute (rpm); substituting the organic developing solution with a nonpolar rinse solution by supplying the nonpolar rinse solution onto the substrate while rotating the substrate at a second rpm, which is lower than the first rpm; continuing to supply the nonpolar rinse solution while rotating the substrate at a third rpm, which is higher than the second rpm; and continuing to supply the nonpolar rinse solution while rotating the substrate at a fourth rpm, which is between the second rpm and the third rpm.
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公开(公告)号：US20240147705A1
公开(公告)日：2024-05-02
申请号：US18097236
申请日：2023-01-14
Applicant: SEMES CO,. LTD.
Inventor： Thomas Jongwan KWON , Yun Sang KIM , Hae Won CHOI
IPC: H10B12/00
CPC classification number: H10B12/488 , H10B12/02 , H10B12/482 , H10B12/485
Abstract: A semiconductor device including memory cells that are three-dimensionally arranged is provided. The semiconductor device includes: a stack structure including first and second layers, which are sequentially stacked on a substrate, the first layer including first and second semiconductor patterns, which are spaced apart from each other and extend in a first direction, and a first bitline, which extends in a second direction different from the first direction and is electrically connected to the first and second semiconductor patterns, the second layer including third and fourth semiconductor patterns, which are spaced apart from each other and extend in the first direction, and a second bitline, which extends in the second direction and is electrically connected to the third and fourth semiconductor patterns, and each of the first through fourth semiconductor patterns including a source, a channel, a drain, and a bottom electrode; a first wordline connecting the channels of the first and third semiconductor patterns in a vertical direction; a second wordline connecting the channels of the second and fourth semiconductor patterns in the vertical direction.
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公开(公告)号：US20230113184A1
公开(公告)日：2023-04-13
申请号：US17865386
申请日：2022-07-15
Applicant: SEMES CO., LTD.
Inventor： Jae Won SHIN , Jae Seong LEE , Hae Won CHOI , Joon Ho WON , Koriakin ANTON , Min Woo KIM , Hyung Seok KANG , Eung Su KIM , Pil Kyun HEO , Jin Yeong SUNG
IPC: H01L21/67
Abstract: The present disclosure relates to a flow resistance generating unit that generates a flow resistance in a pipe to solve a flow imbalance problem due to a bent pipe and stabilizes an internal airflow, and a substrate treating apparatus including the same. The substrate treating apparatus comprises a fluid supply unit for supplying fluid for treating a substrate and including an upper fluid supply module for supplying the fluid to an upper portion of the substrate, a lower fluid supply module for supplying the fluid to a lower portion of the substrate, and a supply pipe connected to at least one of the upper fluid supply module and the lower fluid supply module, and a flow resistance generating unit installed in the supply pipe and for generating a flow resistance with respect to the fluid passing through the supply pipe.
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公开(公告)号：US20230072728A1
公开(公告)日：2023-03-09
申请号：US17737345
申请日：2022-05-05
Applicant: SEMES CO., LTD.
Inventor： Jae Seong LEE , Jung Suk GOH , Hae Won CHOI
Abstract: The present disclosure provides a substrate treating apparatus, in which stability is secured by performing a process under a lower pressure condition, and a substrate treating method using the same. The substrate treating apparatus comprises a chamber including a housing and a treating region, wherein a substrate on which a rinse liquid remains is loaded into the chamber, a supply port installed in the housing and for supplying a first drying gas and a second drying gas to the treating region, a first supply line connected to the supply port, and through which the first drying gas is moved, and a second supply line connected to the supply port, and through which the second drying gas is moved, wherein the first drying gas is a gas below a first temperature, and the second drying gas is a gas equal to or above the first temperature, wherein the second drying gas dries the rinse liquid remaining on the substrate.
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