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公开(公告)号:US20230369074A1
公开(公告)日:2023-11-16
申请号:US18105796
申请日:2023-02-03
Applicant: SEMES CO., LTD.
Inventor: Hae Won CHOI , Hong Chan CHO , Eun Mi KIM
CPC classification number: H01L21/67034 , H01L21/02101
Abstract: Provided is an apparatus for supplying gas in a facility for processing a substrate, the apparatus for supplying gas in a facility for processing a substrate including: a gas supply line connecting a gas storage unit and a process chamber for processing a substrate; and a flow control unit installed in the gas supply line, and controlling a gas flow rate of drying gas supplied through the gas supply line with a metering valve and a mass flow controller (MFC) disposed in parallel.
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公开(公告)号:US20250034719A1
公开(公告)日:2025-01-30
申请号:US18754613
申请日:2024-06-26
Applicant: SEMES CO., LTD.
Inventor: Pil Kyun HEO , Ki Moon KANG , Joon Ho WON , Byeong Kwan KIM , Hong Chan CHO
Abstract: Disclosed is an apparatus for processing a substrate, the apparatus including: a chamber for forming a processing space in which a processing process for a substrate is performed therein by a combination of a first body and a second body; and a driver for moving any one of the first body or the second body relative to the other such that a relative position between the first body and the second body is changeable between a sealed position at which the processing space is sealed from the outside and an open position at which the processing space is opened, in which the first body is formed with a first protrusion on a face that is in contact with the second body, the second body is formed with a first receiving portion, and the first protrusion is provided to be inserted into the first receiving portion when the first body and the second body are at the sealed position.
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