公开(公告)号：US11823874B2

公开(公告)日：2023-11-21

申请号：US17323250

申请日：2021-05-18

Applicant: SEMES CO., LTD.

Inventor： Ogsen Galstyan ,  Junpyo Lee ,  Goon Ho Park ,  Hyun-Jin Kim ,  Young-Bin Kim ,  Jong-Hwan An

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32174

Abstract: Disclosed is a substrate treating apparatus, which includes a chamber having a space for treating a substrate in an interior thereof, a substrate support assembly including a support plate situated in the chamber and which supports the substrate, a gas supply unit which supplies a gas into the interior of the chamber, a plasma generating unit which excites the gas in in the interior of the chamber into a plasma state, and a substrate temperature control unit which controls a temperature of the substrate, and the substrate temperature control unit includes a plurality of heaters installed in different areas of the support plate, a power supply part which supplies electric power to the plurality of heaters, a ferrite core which interrupts a low-frequency signal introduced to the power supply part, and a plurality of air cores which interrupts a high-frequency signal introduced into the power supply part.