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公开(公告)号：US11823874B2
公开(公告)日：2023-11-21
申请号：US17323250
申请日：2021-05-18
Applicant: SEMES CO., LTD.
Inventor： Ogsen Galstyan , Junpyo Lee , Goon Ho Park , Hyun-Jin Kim , Young-Bin Kim , Jong-Hwan An
IPC: H01J37/32
CPC classification number: H01J37/32724 , H01J37/3244 , H01J37/3266 , H01J37/32174
Abstract: Disclosed is a substrate treating apparatus, which includes a chamber having a space for treating a substrate in an interior thereof, a substrate support assembly including a support plate situated in the chamber and which supports the substrate, a gas supply unit which supplies a gas into the interior of the chamber, a plasma generating unit which excites the gas in in the interior of the chamber into a plasma state, and a substrate temperature control unit which controls a temperature of the substrate, and the substrate temperature control unit includes a plurality of heaters installed in different areas of the support plate, a power supply part which supplies electric power to the plurality of heaters, a ferrite core which interrupts a low-frequency signal introduced to the power supply part, and a plurality of air cores which interrupts a high-frequency signal introduced into the power supply part.
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公开(公告)号：US10600618B2
公开(公告)日：2020-03-24
申请号：US16530468
申请日：2019-08-02
Applicant: SEMES CO., LTD.
Inventor： Ogsen Galstyan , Young-Bin Kim , Jamyung Gu , Jong-Hwan An
Abstract: A substrate treating apparatus includes a chamber having a space therein in which a substrate is treated, a support unit that supports the substrate in the chamber, a gas supply unit that supplies gas into the chamber, and a plasma generation unit that excites the gas in the chamber into a plasma state. The plasma generation unit includes a high-frequency power supply, a first antenna connected to one end of the high-frequency power supply, a second antenna connected with the first antenna in parallel, and a current divider that distributes electric current to the first antenna and the second antenna. The current divider includes a first capacitor disposed between the first antenna and the second antenna, a second capacitor connected with the second antenna in parallel, and a third capacitor connected with the second antenna in series. The second capacitor and the third capacitor are implemented with a variable capacitor.
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公开(公告)号：US20200051784A1
公开(公告)日：2020-02-13
申请号：US16530468
申请日：2019-08-02
Applicant: SEMES CO., LTD.
Inventor： Ogsen GALSTYAN , Young-Bin Kim , Jamyung GU , Jong-Hwan An
Abstract: A substrate treating apparatus includes a chamber having a space therein in which a substrate is treated, a support unit that supports the substrate in the chamber, a gas supply unit that supplies gas into the chamber, and a plasma generation unit that excites the gas in the chamber into a plasma state. The plasma generation unit includes a high-frequency power supply, a first antenna connected to one end of the high-frequency power supply, a second antenna connected with the first antenna in parallel, and a current divider that distributes electric current to the first antenna and the second antenna. The current divider includes a first capacitor disposed between the first antenna and the second antenna, a second capacitor connected with the second antenna in parallel, and a third capacitor connected with the second antenna in series. The second capacitor and the third capacitor are implemented with a variable capacitor.
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