SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD

    公开(公告)号:US20230071737A1

    公开(公告)日:2023-03-09

    申请号:US17901904

    申请日:2022-09-02

    Inventor: Myung Chan CHO

    Abstract: Provided is a substrate treating method. The substrate treating method includes: a first supercritical processing operation of loading a first substrate into a supercritical chamber and supercritically processing the first substrate in the supercritical chamber; a resting operation of maintaining the supercritical chamber in an empty state for a first time until a temperature in the supercritical chamber becomes a preset temperature by opening the supercritical chamber after the first substrate is unloaded from the supercritical chamber; and a second supercritical processing operation of loading a second substrate into the supercritical chamber and supercritically processing the second substrate in the supercritical chamber.

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