APPARATUS FOR PROCESSING A SUBSTRATE
    1.
    发明公开

    公开(公告)号:US20240145264A1

    公开(公告)日:2024-05-02

    申请号:US18496224

    申请日:2023-10-27

    CPC classification number: H01L21/67034 H01L21/67017

    Abstract: An apparatus for processing a substrate may include a drying chamber configured to dry at least two divided substrates from an original substrate, the drying chamber may have a drying space where the at least two divided substrates disposed therein. The apparatus for processing a substrate may include a dryness compensation part configured to compensate a difference of drynesses of chemical liquids coated on the at least two divided substrates such that the chemical liquids coated on the at least two divided substrates has a substantially same dryness.

Patent Agency Ranking