公开(公告)号：US20200328271A1

公开(公告)日：2020-10-15

申请号：US16506040

申请日：2019-07-09

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jeffrey Peter GAMBINO ,  David T. PRICE ,  Akihiro HASEGAWA ,  Derryl ALLMAN ,  Sallie J. HOSE ,  Kenneth Andrew BATES ,  Gregory Frank PIATT

IPC: H01L49/02 ,  H01L23/522 ,  H01L27/146 ,  H01L21/3213 ,  H01L21/321

Abstract: Implementations of capacitors may include: a first electrode having a first side and a second side. The capacitor may also include a silicon nitride (SiN) layer including on the second side of the first electrode. An opening may be included in the silicon nitride layer. The capacitors may include a dielectric layer within the opening of the SiN layer. The dielectric layer may include a recess. The capacitor may also include a second electrode having a first side and a second side. The first side of the second electrode may be included within the recess of the dielectric layer.