公开(公告)号：US20210104460A1

公开(公告)日：2021-04-08

申请号：US16674739

申请日：2019-11-05

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Derryl ALLMAN ,  Jefferson W. HALL

IPC: H01L23/525 ,  H01L23/528 ,  H01L23/522 ,  H01L23/00

Abstract: A semiconductor device having a fuse structure includes a region of semiconductor material having a major surface. A dielectric region is over the major surface. A first fuse terminal is over a first part of the dielectric region, a second fuse terminal is over a second part of the dielectric region and spaced apart from the first fuse terminal to provide a gap region, and a fuse body over a third part of the dielectric region interposed between and connected to the first fuse terminal and the second fuse terminal. A dummy structure is over the dielectric region in the gap region on a first side of the fuse body, the dummy structure spaced apart and electrically isolated from the fuse body, the first fuse terminal, and the second fuse terminal. The dummy structure is configured to reduce the presence of or reduce the effects of defects, such as cracks or voids that can emanate from the fuse structure.

公开(公告)号：US20200328271A1

公开(公告)日：2020-10-15

申请号：US16506040

申请日：2019-07-09

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jeffrey Peter GAMBINO ,  David T. PRICE ,  Akihiro HASEGAWA ,  Derryl ALLMAN ,  Sallie J. HOSE ,  Kenneth Andrew BATES ,  Gregory Frank PIATT

IPC: H01L49/02 ,  H01L23/522 ,  H01L27/146 ,  H01L21/3213 ,  H01L21/321

Abstract: Implementations of capacitors may include: a first electrode having a first side and a second side. The capacitor may also include a silicon nitride (SiN) layer including on the second side of the first electrode. An opening may be included in the silicon nitride layer. The capacitors may include a dielectric layer within the opening of the SiN layer. The dielectric layer may include a recess. The capacitor may also include a second electrode having a first side and a second side. The first side of the second electrode may be included within the recess of the dielectric layer.

公开(公告)号：US20220278171A1

公开(公告)日：2022-09-01

申请号：US17188466

申请日：2021-03-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Derryl ALLMAN ,  Diann M. DOW

IPC: H01L27/24 ,  H01L29/861 ,  H01L29/66 ,  H01L45/00 ,  G11C13/00 ,  G06N3/02

Abstract: Implementations of a diode may include a first electrode; a first dielectric layer coupled to the first electrode; a second dielectric layer coupled to the first dielectric layer; and a second electrode coupled to the second dielectric layer. The first dielectric layer may be one of silicon dioxide or aluminum oxide; and the second dielectric layer may be one of niobium oxide, tantalum oxide, zirconium oxide, hafnium oxide, or any combination thereof.

公开(公告)号：US20220181462A1

公开(公告)日：2022-06-09

申请号：US17247212

申请日：2020-12-03

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jeffrey Peter GAMBINO ,  Kevin Alexander STEWART ,  Peter MOENS ,  David T. PRICE ,  Derryl ALLMAN

IPC: H01L29/49 ,  H01L29/24 ,  H01L29/08 ,  H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

Abstract: In a general aspect, a transistor can include a fin having a proximal end and a distal end. The fin can include a dielectric portion longitudinally extending between the proximal end and the distal end, and a semiconductor layer disposed on the dielectric portion. The semiconductor layer can longitudinally extend between the proximal end and the distal end. The transistor can further include a source region disposed at the proximal end of the fin, and a drain region disposed at the distal end of the fin. The transistor can also include a gate dielectric layer disposed on a channel region of the semiconductor layer. The channel region can be disposed between the gate dielectric layer and the dielectric portion. The channel region can be longitudinally disposed between the source region and the drain region. The transistor can further include a conductive gate electrode disposed on the gate dielectric layer.

公开(公告)号：US20210143248A1

公开(公告)日：2021-05-13

申请号：US16682717

申请日：2019-11-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Derryl ALLMAN ,  Diann DOW

IPC: H01L49/02

Abstract: A semiconductor structure includes a region of semiconductor material having a major surface and a first a first insulating structure over the major surface. A first conductive electrode is over the first insulating structure and a laminate film structure is over the first conductive electrode. The laminate film structure includes a first film comprising rutile phase ruthenium dioxide adjacent to the first conductive electrode, and a second film over the first film, wherein the second film comprises a high dielectric constant dielectric material. A second conductive electrode is over the laminate film structure. In some examples, the first film is provided using atomic layer deposition. In some examples, the second film comprises rutile phase titanium dioxide formed using atomic layer deposition. In some examples, the laminate film structure can be used as part of a MIM capacitor.