公开(公告)号：US12107173B2

公开(公告)日：2024-10-01

申请号：US18322249

申请日：2023-05-23

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Andrei Konstantinov

IPC: H01L29/872 ,  H01L21/04 ,  H01L21/761 ,  H01L29/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/36 ,  H01L29/66

CPC classification number: H01L29/872 ,  H01L21/046 ,  H01L21/0465 ,  H01L21/047 ,  H01L21/761 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/045

Abstract: A SiC Schottky rectifier with surge current ruggedness is described. The Schottky rectifier includes one or more multi-layer bodies that provide multiple types of surge current protection.

公开(公告)号：US11476369B2

公开(公告)日：2022-10-18

申请号：US16949395

申请日：2020-10-28

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Andrei Konstantinov

IPC: H01L29/78 ,  H01L29/872 ,  H01L29/808 ,  H01L29/66 ,  H01L29/80 ,  H01L29/06 ,  H01L29/16 ,  H01L29/10

Abstract: A power SiC MOSFET with a built-in Schottky rectifier provides advantages of including a Schottky rectifier, such as avoiding bipolar degradation, while reducing a parasitic capacitive charge and related power losses, as well as system cost. A lateral built-in channel layer may enable lateral spacing of the MOSFET gate oxide from a high electric field at the Schottky contact, while also providing current limiting during short-circuit events.

公开(公告)号：US11715804B2

公开(公告)日：2023-08-01

申请号：US17450734

申请日：2021-10-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Andrei Konstantinov

IPC: H01L29/872 ,  H01L29/16 ,  H01L29/06 ,  H01L29/66 ,  H01L21/04 ,  H01L29/36 ,  H01L29/04 ,  H01L21/761

CPC classification number: H01L29/872 ,  H01L21/046 ,  H01L21/047 ,  H01L21/0465 ,  H01L21/761 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/045

Abstract: A SiC Schottky rectifier with surge current ruggedness is described. The Schottky rectifier includes one or more multi-layer bodies that provide multiple types of surge current protection.

公开(公告)号：US11139394B2

公开(公告)日：2021-10-05

申请号：US16667664

申请日：2019-10-29

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Andrei Konstantinov

IPC: H01L29/78 ,  H01L29/45 ,  H01L29/16 ,  H01L29/49 ,  H01L29/772

Abstract: In a general aspect, a silicon carbide (SiC) field-effect transistor (FET) can include a substrate of a first conductivity type, a drift region of the first conductivity type disposed on the substrate, a spreading layer of the first conductivity type disposed in the drift region, a body region of a second conductivity type disposed in the spreading layer, and a source region of the first conductivity type disposed in the body region. The SiC FET can further include a spacer layer of the first conductivity type disposed on the source region the body region and the spreading layer, and a lateral channel region of the first conductivity type disposed in the spacer layer. The SiC FET can also include a gate structure that includes an aluminum nitride layer disposed on the lateral channel region, and an aluminum gallium nitride layer of the second conductivity disposed on the AlN layer.

公开(公告)号：US11894454B2

公开(公告)日：2024-02-06

申请号：US17448916

申请日：2021-09-27

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Andrei Konstantinov

IPC: H01L29/78 ,  H01L29/45 ,  H01L29/16 ,  H01L29/49 ,  H01L29/80

CPC classification number: H01L29/7802 ,  H01L29/1608 ,  H01L29/456 ,  H01L29/4966 ,  H01L29/802

Abstract: In a general aspect, a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) can include a substrate of a first conductivity type, a drift region of the first conductivity type disposed on the substrate, a spreading layer of the first conductivity type disposed in the drift region, a body region of a second conductivity type disposed in the spreading layer, and a source region of the first conductivity type disposed in the body region. The SiC MOSFET can also include a gate structure that includes a gate oxide layer, an aluminum nitride layer disposed on the gate oxide layer, and a gallium nitride layer of the second conductivity disposed on the aluminum nitride layer.

公开(公告)号：US11817478B2

公开(公告)日：2023-11-14

申请号：US17247796

申请日：2020-12-23

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jaume Roig-Guitart ,  Fredrik Allerstam ,  Thomas Neyer ,  Andrei Konstantinov ,  Martin Domeij ,  Jangkwon Lim

IPC: H01L29/06 ,  H01L29/16

CPC classification number: H01L29/0623 ,  H01L29/1608

Abstract: In a general aspect, a semiconductor device can include a substrate of a first conductivity type, an active region disposed in the substrate, and a termination region disposed in the substrate adjacent to the active region. The termination region can include a junction termination extension (JTE) of a second conductivity type, where the second conductivity type is opposite the first conductivity type. The JTE can have a first depletion stopper region disposed in an upper portion of the JTE, a second depletion stopper region disposed in a lower portion of the JTE, and a high carrier mobility region disposed between the first depletion stopper region and the second depletion stopper region.

公开(公告)号：US11171248B2

公开(公告)日：2021-11-09

申请号：US16512780

申请日：2019-07-16

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Andrei Konstantinov

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L21/04 ,  H01L29/36 ,  H01L21/761 ,  H01L29/04

Abstract: SiC Schottky rectifier 100 with surge current ruggedness. As referenced above, the Schottky rectifier 100 may be configured to provide multiple types of surge current protection.

公开(公告)号：US10707340B2

公开(公告)日：2020-07-07

申请号：US16124413

申请日：2018-09-07

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Andrei Konstantinov

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/06 ,  H01L21/04 ,  H01L29/66 ,  H01L29/10

Abstract: In a general aspect, a silicon carbide (SiC) rectifier can include a substrate of a first conductivity type, a drift region of the first conductivity type, a junction field effect transistor (JFET) region of the first conductivity type, a body region of a second conductivity type, an anode implant region of the first conductivity type, and a channel of the first conductivity type. The channel can be in contact with and disposed between the JFET region and the anode implant region. A portion of the channel between the anode implant region and the JFET region can be disposed in the body region, The channel can be configured to be off under zero-bias conditions, and on at a positive turn-on voltage.