公开(公告)号：US20160233267A1

公开(公告)日：2016-08-11

申请号：US15133052

申请日：2016-04-19

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Kevin W. HUTTO ,  Andrew PERKINS ,  Marc SULFRIDGE

IPC: H01L27/146

CPC classification number: H01L27/14687 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/0203 ,  H01L31/022408 ,  H01L31/20 ,  H01L2224/13

Abstract: Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.

Abstract translation: 提供了用于形成具有金属再分布层（RDL）的背面照明（BSI）图像传感器和用于与外部电路的高性能连接的焊料凸块的方法。 在一个实施例中，具有RDL和焊料凸块的BSI图像传感器可以在制造期间使用临时载体形成，其在BSI图像传感器完成之前被移除。 在另一个实施例中，具有RDL和焊料凸块的BSI图像传感器可以在制造期间使用永久载体形成，其部分保留在完整的BSI图像传感器中。 BSI图像传感器可以在形成BSI图像传感器的前侧上的再分布层之前形成。 或者，在形成图像晶片的背侧上的诸如微透镜和滤色器之类的BSI部件之前，可以在图像晶片的正面上形成再分布层。

公开(公告)号：US20160352983A1

公开(公告)日：2016-12-01

申请号：US14723147

申请日：2015-05-27

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Ulrich BOETTIGER ,  Andrew PERKINS ,  Marc SULFRIDGE ,  Swarnal BORTHAKUR

IPC: H04N5/225 ,  H01L27/146 ,  H04N9/04

CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H04N5/2254 ,  H04N9/045

Abstract: An imaging system may include an image sensor having an array of pixels. The image sensor may include an array of microlenses formed over a substrate and an array of color filter elements interposed between the microlenses and the substrate. Dielectric wall structures may be interposed between the color filter elements. Light shield structures may be formed within or on the dielectric wall structures and may be used to reduce optical crosstalk between adjacent pixels. The light shield structures may be formed on opposing sides or corners of the color filter elements and may partially or fully extend along the height of the color filter elements. In some arrangements, the light shield structures may each have a vertical portion that contacts a side surface of an adjacent color filter element and a horizontal portion that contacts a lower surface of an adjacent color filter element.

Abstract translation: 成像系统可以包括具有像素阵列的图像传感器。 图像传感器可以包括形成在衬底上的微透镜阵列和插入在微透镜和衬底之间的滤色器元件的阵列。 电介质壁结构可以插在滤色器元件之间。 光屏蔽结构可以形成在电介质壁结构内或上，并且可以用于减少相邻像素之间的光学串扰。 遮光结构可以形成在滤色器元件的相对侧或角上，并且可以沿着滤色器元件的高度部分或全部地延伸。 在一些布置中，遮光结构可以各自具有接触相邻滤色器元件的侧表面的垂直部分和接触相邻滤色器元件的下表面的水平部分。